Structural Characterization of Carbon-implanted GaSb

Abstract

Ion implantation induced damage in GaSb and its removal by rapid thermal annealing (RTA) have been investigated by Raman spectroscopy. The evolution of the Raman modes as a function of implantation fluence, annealing temperature and time has been analyzed. Results indicate that a lattice quality that is close to as-grown GaSb has been obtained by annealing the implanted samples at 500 °C for 45 s. However, consequent surface analyses by scanning electron microscope (SEM) and atomic force microscope (AFM) show that a heavily perturbed layer contains voids due to the outdiffusion of Sb atoms on the surface remains. Mechanism of the damage recovery and the structure of the implanted layer are discussed based on the experimental results.

Keywords

ion implantation / Raman spectroscopy / GaSb / RTA

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