The Electronic and Optical Properties of Vertically Stacked GaN-WS₂ Heterostructure

Abstract

The electronic structure and optical property of stacked GaN-WS₂ heterostructure are explored with HSE06 calculation based on density functional theory. The direct band gap of GaN-WS₂ heterostructure is 1.993 eV, which is obviously a type-II band alignment semiconductor. Furthermore, the optical property of GaN-WS₂ heterostructure such as absorption coefficient is analyzed. These new findings enable GaN-WS₂ heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.

Keywords

GaN-WS₂ heterostructure / band structure / optical property / calculation

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