The Electronic and Optical Properties of Vertically Stacked GaN-WS2 Heterostructure
Dahua Ren , Kai Qian , Qiang Li , Yuan Zhang , Teng Zhang
Journal of Wuhan University of Technology Materials Science Edition ›› 2022, Vol. 37 ›› Issue (1) : 28 -31.
The Electronic and Optical Properties of Vertically Stacked GaN-WS2 Heterostructure
The electronic structure and optical property of stacked GaN-WS2 heterostructure are explored with HSE06 calculation based on density functional theory. The direct band gap of GaN-WS2 heterostructure is 1.993 eV, which is obviously a type-II band alignment semiconductor. Furthermore, the optical property of GaN-WS2 heterostructure such as absorption coefficient is analyzed. These new findings enable GaN-WS2 heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.
GaN-WS2 heterostructure / band structure / optical property / calculation
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