Effects of Oxygen Concentration in Monocrystalline Silicon on Reverse Leakage Current of PIN Rectifier Diodes

Abstract

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied. We fabricated the PIN rectifier diodes with different initial oxygen concentrations, and analyzed the electrical properties, anisotropic preferred etching by means of optical microscopy, Fourier transform infrared spectroscopy and transmission electron microscopy. It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration. Furtherly, we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode. It is shown that the oxygen precipitations present in an “S” curve with increasing initial oxygen concentration after high temperature diffusion. The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF), which are mainly dislocations, and a small amount of rod stacking faults. The density of B-OSF increases with the increasing initial oxygen concentration. The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.

Keywords

oxygen concentration / PIN rectifier diode / induced defect / reverse leakage current

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