Influencing Factors of Reheating Shrinkage Rate of Glass Substrate on LTPS Process

Abstract

Different heating treatments with the variation of heating rates, holding temperatures and holding time were used to simulate the LTPS procedure. The experimental results show that the reheating shrinkage rates of glass substrates are rarely changed with increasing the heating rate, but strongly enhanced by raising the holding temperature and time, which shows that the reheating shrinkage of glass is closely related to heat treatment and structural relaxation. The production process of glass is critical to the reheating shrinkage of glass.

Keywords

low temperature ploy-silicon(LTPS) / glass substrates / reheating shrinkage rate / structural relaxation

References

[1] Zhang RJ. OLED Application and Market[J]. Electronic Commerce in China: Basic Electronics, 2007(10): 68–70

[2] Chen ZQ. Low Temperature Polycrystalline Silicon (LTPS) Display Technology[M], 2006 Beijing: Science Press.

[3] BOE Technology Group Co., Ltd. A Manufacturing Method of Low Temperature Polysilicon TFT Array Substrate[P]. China, https://doi.org/102543860A.2012-07-04

[4] Sichuan Hongshi Display Technology Co., Ltd. The LTPS Process[P]. China, 103972169A. 2014-08-06

[5] Meakin D, Stoemenos J, Migliorato P, et al. Structural Studies of Low-temperature Low-pressure Chemical Deposited Polycrystalline Silicon[J]. Journal of Applied Physics, 1987, 61(11): 5 031-5 037.

[6] Matsumura H. Formation of Silicon-based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method[J]. Japanese Journal of Applied Physics, 1998, 37(6A): 3 175-3 187.

[7] Little TW, Takahara K, Koike H, et al. Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator[J]. Japanese Journal of Applied Physics, 1991, 30(30): 3 724-3 728.

[8] Efremov MD, Bolotov VV, Volodin VA, et al. Excimer Laser and Rapid Thermal Annealing Stimulation of Solid-phase Nucleation and Crystallization in Amorphous Silicon Films on Glass Substrates[J]. Journal of Physics Condensed Matter, 1996, 8(3): 273-286.

[9] Bhat GA, Wong M, Jin ZH, et al. Analysis and Reduction of Fink Effect in MILL-TFTs[A]. Asia Display Dig Teeh, 1998: 433–436

[10] Lee JN, Choi YW, Lee BJ, et al. Microwave-induced Low-temperature Crystallization of Amorphous Silicon Thin Films[J]. Journal of Applied Physics, 1997, 82(6): 2 918-2 921.

[11] Smith PM, Carey PG, Sigmon TW. Excimer Laser Crystallization and Doping of Silicon Films on Plastic Substrates[J]. Applied Physics Letters, 1997, 70(3): 342-344.

[12] Beijing University of Technology. Device and Method for Measuring Reheater Shrinkage Rate of Ultra-thin Glass by Laser Method[P]. China, 108519402A. 2018-09-11

[13] Tian YL, Zhang L, Sun SB, et al. A High Strain Point Aluminium Borosilicate glass[P]. China, 101891382A. 2010-11-24

[14] Tian YL, Zhang L, Sun SB. Alkali Free Aluminosilicate Glass with High Strain Point[P]. China, 101913764 A. 2010-12-15

[15] Tian YL, Hu CM, Zhang GT, et al. Development of Glass Substrate for LCD/OLED Displays based on LTPS Process Technology[J]. Material Reports, 2018, 32(A02): 73-79.

[16] Ye QM, He GP. Compaction of Glass Substrates for Active-matrix Liquid Crystal Display[J]. Material Reports, 1999, 13(6): 68-69.

[17] Hayashi K, Akiyama J, Kunigita M. P-192: Evaluation of Dimensional Stability during Low-temperature Poly-Si TFT Fabrication Process using an Ultra-low Thermal-shrinkage Glass Substrate[J]. Sid Symposium Digest of Technical Papers, 2014, 45(1): 1 244-1 247.

[18] Tomozawa M, Peng YL. Surface Relaxation as a Mechanism of Static Fatigue of Pristine Silica Glass Fibers[J]. Journal of Non-Crystalline Solids, 1998, 240(1–3): 104-109.

[19] Tian YL, Sun SB. New Glass Technology[M], 2009 Beijing: China Light Industry Press.