Growth and Characteristics of n-VO₂/p-GaN based Heterojunctions

Abstract

n-VO₂/p-GaN based oxide-nitride heterojunctions were realized by growing high quality VO2 films with precisely controlled thickness on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). The high crystalline quality of the n-VO₂/p-GaN heterojunctions were confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The phase transition characteristics of the as-grown n-VO₂/p-GaN heterojunctions were systematically investigated by temperature-dependent resistivity and infrared transmittance measurements. The results indicated that an excellent reversible metal-to-insulator (MIT) transition is observed with an abrupt change in both resistivity and infrared transmittance (IR) at 330 K, which was lower than the 341 K for bulk single crystal VO₂. Remarkably, the resistivity-temperature curve was well consistent with that obtained from the temperature dependent IR transmittance. Meanwhile, the current-voltage characteristics originated from the n-VO₂/p-GaN interface were demonstrated both before and after MIT of VO₂ overlayer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. The design and modulation of the n-VO₂/p-GaN based heterostructure devices will benefit significantly from these achievements.

Keywords

vanadium oxide / molecular beam epitaxy / oxide-nitride heterojunctions / metal-insulator transition

References

[1] Aetukri NB, Gray AX, Drouard M, et al. Control of the Metal-insulator Transition in Vanadium Dioxide by Modifying Orbital Occupancy. Nature Physics, 2013, 9(10): 661-666.

[2] Li M, Magdassi S, Gao YF, et al. Hydrothermal Synthesis of VO2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows. Small, 2017, 13(36): 1701147 UNSP

[3] Ran K, Huang WX, Shi QW, et al. Freeze-drying Induced Nano Crystallization of VO₂ (M) with Improved Mid-infrared Switching Properties. Journal of Alloys Compounds, 2017, 728: 1 076-1 082.

[4] Slusar TV, Cho JC, Lee HR, et al. Mott Transition in Chain Structure of Strained VO₂ Films Revealed by Coherent Phonons. Scientific Reports, 2017, 7: 16 038.

[5] Zhang ZT, Gao YF, Chen ZH, et al. Thermochromics VO₂ Thin Films: Solution-Based Processing, Improved Optical Properties, and Lowered Phase Transformation Temperature. Langmuir, 2010, 26(13): 10 738-10 744.

[6] Ji CHH, Wu ZHM, Lu LL, et al. High Thermochromics Performance of Fe/Mg Co-doped VO₂ Thin Films for Smart Window Applications. Journal of Materials Chemistry C, 2018, 6(24): 6502-6509.

[7] Ke YJ, Wang SC, Liu GW, et al. Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications. Small, 2018, 14(39): 1802025

[8] Minha K, Donguk K, Jin-hong P, et al. Structural and Optical Properties of VO₂ Thin Film Grown by Reactive Sputtering from Mo-Doped V Metal Target. Science of Advanced Materials, 2017, 9(8): 1 340-1 345.

[9] Chen YL, Zhang XQ, Fang CQ, et al. Synthesis, Structure and Properties of Printable W-doped Thermochromics VO₂ with a Low Phase Transition Temperature. Ceramics Intermational, 2018, 44(16): 20 084-20 092.

[10] Hyun J, Min-woo K, Woong-ki H. Voltage Sweep Direction-dependent Metal-insulator Transition in a Single-crystalline VO₂ Nano Beam Embedded in an Insulating Layer. Journal of Alloys and Compounds, 2017, 720: 445-450.

[11] Zhang C, Kang CHY, Zong HT, et al. Stress Induced Modulation of the Structure and Photoelectric Property of Vanadium Oxide Films on Sapphire Substrate. Journal of Inorganic Materials, 2018, 33(11): 1 225-1 231.

[12] S WM, Soo KI, Guo PJ, et al. Oxidation State Discrimination in the Atomic Layer Deposition of Vanadium Oxides. Chemistry of Materials, 2017, 29(15): 6 238-6 244.

[13] Salinporn K, Jude L, ND Jr., et al. Transport Behavior and Electronic Structure of Phase Pure VO₂ Thin Films Grown on C-plane Sapphire under Different O₂ Partial Pressure. Journal of Applied Physics, 2013, 114(5): 053703

[14] Heungsoo K, S NB, A CN, et al. Strain Effect in Epitaxial VO₂ Thin Films Grown on Sapphire Substrates using SnO₂ Buffer Layers. Aip Advances, 2017, 7(10): 105116

[15] Roccaforte F, Fiorenza P, Greco G, et al. Emerging Trends in Wide Band Gap Semiconductors (SiC and GaN) Technology for Power Devices. Microelectronic Engineering, 2018, 187: 66-77.

[16] Wang MH, Bian JM, Sun HJ, et al. n-VO₂/p-GaN Based Nitrideoxide Heterostructure with Various Thickness of VO₂ Layer Grown by MBE. Applied Surface Science, 2016, 389: 199.

[17] Bian JM, Wang MH, Sun HJ, et al. Thickness-modulated Metal-insulator Transition of VO₂ Film Grown on Sapphire Substrate by MBE. Journal of Materials Science, 2016, 51(13): 6 149-6 155.

[18] Fan LL, Chen S, Wu YF, et al. Growth and Phase Transition Characteristics of Pure M-phase VO₂ Epitaxial Film Prepared by Oxide Molecular Beam Epitaxy. Applied Physics Letters, 2013, 103(13): 131 914

[19] Wu CHZH, Xie Y. Promising Vanadium Oxide and Hydroxide Nanostructures: From Energy Storage to Energy Saving. Energy & Environmental Science, 2010, 3(9): 1 191-1 206.

[20] Bian JM, Wang MH, Miao LH, et al. Growth and Characterization of VO₂/p-GaN/sapphire Heterostructure with Phase Transition Properties. Applied Surface Science, 2015, 357: 282-286.

[21] Li XX, Bian JM, Wang MH, et al. Realization of Nitride-oxide Based p-n Heterojunctions with the n-VO₂/p-GaN/sapphire Structure. Materials Research Bulletin, 2016, 77: 199-204.