Resistance Switching Behaviour and Properties of Ag/La_0.5Mg_0.5MnO₃/p⁺-Si with Different Thicknesses of Resistance Films Fabricated through Sol—Gel Method

Abstract

Ag/La_0.5Mg_0.5MnO₃/p⁺-Si resistance switching device for nonvolatile memory application was fabricated by sol-gel method. The thickness effects of La_0.5Mg_0.5MnO₃ (LMMO) films on current-voltage (I–V) characteristics, resistance switching behaviour and endurance characteristics of Ag/LMMO/p⁺-Si device were investigated. The same crystallisation and phase structure were confirmed in the LMMO films with increased film thickness. The Ag/LMMO/p⁺-Si device exhibits the typical bipolar resistive switching behaviour. As the LMMO thickness and the stable repetition switching cycle numbers increase, V _Set, and V _Reset of the device will increase, but the R _HRS/R _LRS will decrease. The Ag/LMMO/p⁺-Si device with 165 nm thick LMMO films exhibit the best performance, in which the R _HRS/R _LRS exceeds 10⁴ for 1 000 switching cycles, and its degradation is invisible for more than 10⁶ s.

Keywords

La_0.5Mg_0.5MnO₃ / thickness / RRAM / sol-gel

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