Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

Pengfei Wang; Hui Zhu; Yingqiao Zhang; Shiwei Feng; Chunsheng Guo; Yamin Zhang; Xiao Meng; Qiong Qi

doi:10.1007/s11595-018-1975-9

Journal of Wuhan University of Technology Materials Science Edition ›› 2018, Vol. 33 ›› Issue (6) : 1360 -1364. DOI: 10.1007/s11595-018-1975-9

Advanced Materials

Bipolar Resistive Switching Effect in BiFeO₃/Nb:SrTiO₃ Heterostructure by RF Sputtering at Room Temperature

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Abstract

The (001) oriented BiFeO₃ thin film was deposited on the Nb: SrTiO₃ substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO₃/Nb: SrTiO₃ heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.

Keywords

BiFeO₃ films / sputter / bipolar resistive switching / space-charge-limited conduction

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Pengfei Wang, Hui Zhu, Yingqiao Zhang, Shiwei Feng, Chunsheng Guo, Yamin Zhang, Xiao Meng, Qiong Qi. Bipolar Resistive Switching Effect in BiFeO₃/Nb:SrTiO₃ Heterostructure by RF Sputtering at Room Temperature. Journal of Wuhan University of Technology Materials Science Edition, 2018, 33(6): 1360-1364 DOI:10.1007/s11595-018-1975-9