Effects of Strains on Thermal Conductivity of Si/Ge Superlattices

Abstract

The effect of strains on the thermal conductivity of Si/Ge superlattices was investigated by nonequilibrium molecular dynamics (NEMD) simulation. The thermal conductivities experienced a near linear drop with increasing tensile and compressive strains. It was explained by the fact that the decrease of the phonons velocities and a mass of structural defects generated under strains. Meanwhile, a theoretical calculation based on Modified-Callaway model was performed and it was found that the theoretical results were in good agreement with the molecular dynamics results.

Keywords

thermal conductivity / strains / nonequilibrium molecular dynamics / Si/Ge superlattics

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