Temperature Induces Self-assembly of Silicon Nano/Micro-structure based on Multi-physics Approach

Abstract

A three-dimensional dynamic model for nano/micro-fabrications of silicon was presented. With the developed model, the fabrication process of silicon on nothing (SON) structure was quantitatively investigated. We employ a diffuse interface model that incorporates the mechanism of surface diffusion. The mechanism of the fabrication is systematically integrated for high reliability of computational analysis. A semi-implicit Fourier spectral scheme is applied for high efficiency and numerical stability. Moreover, the theoretical analysis provides the guidance that is ordered by the fundamental geometrical design parameters to guide different fabrications of SON structures. The performed simulations suggest a substantial potential of the presented model for a reliable design technology of nano/micro-fabrications.

Keywords

nano/micro-structure / phase field model / silicon on nothing / self-assembly

References

[1] Sudoh K, Iwasaki H, Hiruta R, et al. Void Shape Evolution and Formation of Silicon-on-nothing Structures during Hydrogen Annealing of Hole Arrays on Si(001)[J]. Journal of Applied Physics, 2009, 105(8): 083536-083536.

[2] Sudoh K, Iwasaki H, Kuribayashi H, et al. Numerical Study on Shape Transformation of Silicon Trenches by High-temperature Hydrogen Annealing[J]. Japanese Journal of Applied Physics, 2004, 43(9A): 5937-5941.

[3] Sato T, Mitsutake K, Mizushima I, et al. Micro-structure Transformation of Silicon: A Newly Developed Transformation Technology for Patterning Silicon Surfaces Using the Surface Migration of Silicon Atoms by Hydrogen Annealing[J]. Japanese Journal of Applied Physics, 2000, 39(9A): 5033-5038.

[4] Sato T, Mizushima I, Taniguchi S, et al. Fabrication of Silicon-on-nothing Structure by Substrate Engineering Using the Empty-space-in-silicon Formation Technique[J]. Japanese Journal of Applied Physics, 2004, 43(1): 12-18.

[5] Depauw V, Gordon I, Beaucarne G, et al. Large-area Monocrystalline Silicon Thin Films by Annealing of Macroporous Arrays: Understanding and Tackling Defects in the Material[J]. Journal of Applied Physics, 2009, 106(3): 033516-10.

[6] Ghannam MY, Alomar AS, Poortmans J, et al. Interpretation of Macropore Shape Transformation in Crystalline Silicon upon High Temperature Processing[J]. Journal of Applied Physics, 2010, 108(7): 074902-7.

[7] Chen YJ, Kang WL. Experimental Study and Modeling of Double-surrounding-gate and Cylindrical Silicon-on-nothing MOSFETs[J]. Microelectronic Engineering, 2012, 97(3): 138-143.

[8] Kilchytska V, Chung TM, Olbrechts B, et al. Electrical Characterization of True Silicon-On-Nothing MOSFETs Fabricated by Si Layer Transfer over a Pre-etched cavity[J]. Solid State Electronics, 2007, 51(9): 1238-1244.

[9] Kasturi P, Saxena M, Gupta RS. Modeling and Simulation of STacked Gate Oxide (STGO) Architecture in Silicon-On-Nothing (SON) MOSFET[J]. Solid State Electronics, 2005, 49(10): 1639-1648.

[10] Mueller T, Dantz D A W, et al. Modeling of Morphological Changes by Surface Diffusion in Silicon Trenches[J]. Journal of The Electrochemical Society, 2006, 2(2): 363

[11] Kumari V M, Saxena M, Gupta R S, et al. Simulation Study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for High Temperature Applications[J]. Microelectronics Reliability, 2012, 52(8): 1610-1612.

[12] Kumari V M, Saxena M, Gupta RS, et al. Temperature Dependent Drain Current Model for Gate Stack Insulated Shallow Extension Silicon On Nothing(ISESON) MOSFET for Wide Operating Temperature Range[J]. Microelectronics Reliability, 2012, 52(6): 974-983.

[13] Kim D. Computational Analysis of the Interfacial Effect on Electromigration in Flip Chip Solder Joints[J]. Microelectronic Engineering, 2009, 86(10): 2132-2137.

[14] Kim D, Lu W. Three-dimensional Model of Electrostatically Induced Pattern Formation in Thin Polymer Films[J]. Physical Review B, 2006, 73(3): 035206-7.

[15] Kim D, Lu W. Creep Flow, Diffusion, and Electromigration in Small Scale Interconnects[J]. Journal of the Mechanics & Physics of Solids, 2006, 54(12): 2554-2568.

[16] Kim DC, Lu W. Self-organized Nanostructures in Multi-phase Epilayers[J]. Nanotechnology, 2004, 15(5): 667-674.

[17] Chen LQ. Phase-field Models for Microstructure Evolution[J]. Annual Review of Materials Research, 2002, 32(1): 113-140.

[18] Lu W, Kim DC. Patterning Nanoscale Structures by Surface Chemistry[J]. Nano Letters, 2004, 4(2): 313-316.

[19] Zhang L, Kim S, Kim D. Multiphysics and Multiscale Analysis for Chemotherapeutic Drug[J]. Biomed Research International, 2015, 2015(12): 493985-493999.

[20] Cahn J. Free Energy of a Nonuniform System.1. Interfacial Free Energy[J]. Journal of Chemical Physics, 1958, 28(2): 258-267.

[21] Ascher UM, Ruuth SJ, Wetton BTR. Implicit Explicit Methods for Time-Dependent Partial-Differential Equations[J]. Siam Journal on Numerical Analysis, 1995, 32(3): 797-823.

[22] Herino R, Perio A, Barla K, et al. Microstructure of Porous Silicon and its Evolution with Temperature[J]. Materials Letters, 1984, 2(6): 519-523.

[23] Wijaranakula W. An Experimental Estimation of Silicon Interstitial Diffusivity[J]. Journal of Applied Physics, 1990, 67(12): 7624-7627.

[24] Lee MCM, Wu MC. Thermal Annealing in Hydrogen for 3-D Profile Transformation on Silicon-on-insulator and Sidewall Roughness Reduction[J]. Journal of Microelectromechanical Systems, 2006, 15(2): 338-343.

[25] Kim J, Song J, Kim K, et al. Hollow Mocrotube Resonators via Silicon Self-assembly for Mass Sensing Applications[J]. Nano Letters, 2016, 2016(16): 1537-1545.