Effects of electrode on resistance switching properties of ZnMn₂O₄ films deposited by magnetron sputtering

Abstract

ZnMn₂O₄ films for resistance random access memory (RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn₂O₄ films were investigated. The ZnMn₂O₄ films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching (BRS) behavior dominated by the space-charge-limited conduction (SCLC) mechanism in the high resistance state (HRS) and the filament conduction mechanism in the low resistance state (LRS), but the ZnMn₂O₄ films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel (P-F) conduction mechanism in both HRS and LRS. Ag/ZnMn₂O₄/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 10⁶ seconds. However, the highest R _HRS/R _LRS ratio of 10⁴ and the lowest V _ON and V _OFF of 3.0 V have been observed in Ag/ZnMn₂O₄/Pt device. Though the Ag/ZnMn₂O₄/n-Si device also possesses the highest R _HRS/R _LRS ratio of 10⁴, but the highest values of V _ON,V _OFF, R _HRS and R _LRS, as well as the poor endurance and retention characteristics.

Keywords

ZnMn₂O₄ / resistance switching behavior / electrode / magnetron sputtering

References

[1] Waser R, Aono M. Nanoionics-based Resistive Switching Memories[J]. Nature materials, 2007, 6(11): 833-840.

[2] Sawa A. Resistive Switching in Transition Metal Oxides[J]. Materials Today, 2008, 11(6): 28-36.

[3] Choi BJ, Jeong DS, Kim SK, et al. Resistive Switching Mechanism of Thin Films Grown by Atomic-layer Deposition[J]. Journal of Applied Physics, 2005, 98(3): 033715-1.

[4] Seo S, Lee MJ, Seo DH, et al. Reproducible Resistance Switching in Polycrystalline NiO Films[J]. Applied Physics Letters, 2004, 85(23): 5655-5657.

[5] Lv HB, Yin M, Song YL, et al. Forming Process Investigation of CuO Memory Films[J]. Electron. Device Letters, IEEE, 2008, 29(1): 47-49.

[6] Tang MH, Jiang B, Xiao YG, et al. Top Electrode-dependent Resistance Switching Behaviors of ZnO Thin Films Deposited on Pt/Ti/SiO₂/Si Substrate[J]. Microelectronic Engineering, 2012, 93: 35-38.

[7] Gao S, Wang H, Xu J, et al. Effect of Annealing Temperature on Resistance Switching Behavior of Mg_0.2Zn_0.8O Thin Films Deposited on ITO Glass[J]. Solid-State Electronics, 2012, 76: 40-43.

[8] Watanabe Y, Bednorz JG, Bietsch A, et al. Current-driven Insulatorconductor Transition and Nonvolatile Memory in Chromium-doped SrTiO₃ Single Crystals[J]. Applied Physics Letters, 2001, 78(23): 3738-3740.

[9] Tang MH, Wang ZP, Li JC, et al. Bipolar and Unipolar Resistive Switching Behaviors of Sol-gel-derived SrTiO₃ Thin Films with Different Compliance Currents[J]. Semicond. Sci. Technol., 2011, 26: 1-4.

[10] Sun BC, Wang H, Xu JW, et al. Effect of Annealing Temperature on Resistance Switching and Dielectric Characteristics of Bi₄Ti₃O₁₂ Thin Films[J]. Microelectronic Engineering, 2014, 113: 1-4.

[11] Dong R, Wang Q, Chen LD, et al. Retention Behavior of the Electric-pulse-induced Reversible Resistance Change Effect in Ag-La_0.7Ca_0.3MnO₃-Pt Sandwiches[J]. Applied Physics Letters, 2005, 86(17): 172107

[12] Wang D, Zhao Y, Xu X, et al. Novel Li₂MnO₃ Nanowire Anode with Internal Li-enrichment for Use in a Li-ion Battery[J]. Nanoscale, 2014, 6: 8124-8129.

[13] Peng H, Wu T. Nonvolatile Resistive Switching in Spinel ZnMn₂O₄ and Ilmenite ZnMnO₃[J]. Applied Physics Letters, 2009, 95: 152106-1.

[14] Chen X, Wu G, Jiang P, et al. Colossal Resistance Switching Effect in Pt/spinel-MgZnO/Pt Devices for Nonvolatile Memory Applications[J]. Applied Physics Letters, 2009, 94: 033501-1.

[15] Krishnaprasad PS, Mohanan P, Subodh G, et al. A Novel Sr₃Pb₆Ce₂Ti₁₂O₃₆ Ferroelectric Thin Film Grown by Pulsed Laser Ablation[J]. Applied Physics A, 2014, 116: 199-206.