Low temperature synthesis of amorphous La0.7Zn0.3MnO3 films grown on p+-Si substrates and its resistive switching properties

Qisong Chen; Hua Wang; Jiwen Xu; Changcheng Wei; Xiaowen Zhang; Ling Yang

doi:10.1007/s11595-016-1437-1

Journal of Wuhan University of Technology Materials Science Edition ›› 2016, Vol. 31 ›› Issue (4) : 727 -730. DOI: 10.1007/s11595-016-1437-1

Advanced Materials

Low temperature synthesis of amorphous La_0.7Zn_0.3MnO₃ films grown on p⁺-Si substrates and its resistive switching properties

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Abstract

Amorphous La_0.7Zn_0.3MnO₃ (LZMO) films were deposited on p⁺-Si substrates by sol-gel method at low temperature of 450 °C. The Ag/LZMO/p⁺-Si device exhibits invertible bipolar resistive switching and the R _HRS/R _LRS was about 10⁴-10⁶ at room temperature which can be kept over 10³ switching cycles. Better endurance characteristics were observed in the Ag/LZMO/p⁺-Si device, the V _Set and the V _Reset almost remained after 10³ endurance switching cycles. According to electrical analyses, the conductor mechanism was in low resistor state (LRS) governed by the filament conductor and in the high state (HRS) dominated by the traps-controlled space-charge-limited current (SCLC) conductor.

Keywords

amorphous / La_0.7Zn_0.3MnO₃ / bipolar / sol-gel

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Qisong Chen, Hua Wang, Jiwen Xu, Changcheng Wei, Xiaowen Zhang, Ling Yang. Low temperature synthesis of amorphous La_0.7Zn_0.3MnO₃ films grown on p⁺-Si substrates and its resistive switching properties. Journal of Wuhan University of Technology Materials Science Edition, 2016, 31(4): 727-730 DOI:10.1007/s11595-016-1437-1

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