Resistance switching properties of Ag/ZnMn2O4/p-Si fabricated by magnetron sputtering for resistance random access memory

Hua Wang; Zhida Li; Jiwen Xu; Yupei Zhang; Ling Yang; Wei Qiu

doi:10.1007/s11595-015-1288-1

Journal of Wuhan University of Technology Materials Science Edition ›› 2015, Vol. 30 ›› Issue (6) : 1159 -1162. DOI: 10.1007/s11595-015-1288-1

Advanced Materials

Resistance switching properties of Ag/ZnMn₂O₄/p-Si fabricated by magnetron sputtering for resistance random access memory

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Abstract

A resistance random access memory (RRAM) with a structure of Ag/ZnMn₂O₄/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn₂O₄ films was obtained between two well-defined states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10³ orders of magnitude and up to about 10³ test cycles. The retention time of Ag/ZnMn₂O₄/ p-Si device is longer than 10⁶ seconds and the resistance ratio between two states remains higher than 10³ at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS (high resistance state) and LRS (low resistance state) were also studied by impedance spectroscopy.

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ZnMn₂O₄ / resistance switching / properties / RRAM / magnetron sputtering

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Hua Wang, Zhida Li, Jiwen Xu, Yupei Zhang, Ling Yang, Wei Qiu. Resistance switching properties of Ag/ZnMn₂O₄/p-Si fabricated by magnetron sputtering for resistance random access memory. Journal of Wuhan University of Technology Materials Science Edition, 2015, 30(6): 1159-1162 DOI:10.1007/s11595-015-1288-1

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