The effect of magnetic field on resistivity of Hg0.89Mn0.11Te in different temperature range

Zewen Wang , Wanqi Jie

Journal of Wuhan University of Technology Materials Science Edition ›› 2015, Vol. 30 ›› Issue (5) : 923 -927.

PDF
Journal of Wuhan University of Technology Materials Science Edition ›› 2015, Vol. 30 ›› Issue (5) : 923 -927. DOI: 10.1007/s11595-015-1251-1
Article

The effect of magnetic field on resistivity of Hg0.89Mn0.11Te in different temperature range

Author information +
History +
PDF

Abstract

The resistivity of Hg0.89Mn0.11Te has been measured by the superconducting quantum interference device magnetometer in the temperature range from 5 to 200 K under the applied magnetic field of 1, 2, 4 and 6.5 Tesla, respectively, compared with that of no-magnetic field. The results show that the resistivity increases with increase applied magnetic field at higher temperature from 80 to 200 K, but decreases at lower temperature from 5 to 25 K. There exists a transitive range from 25 to 80 K, where the variation of the resistivity shows different tendencies depending on the strength of magnetic field. Maximum difference of resistivity under 6.5 Tesla from that without magnetic field in the temperature range from 30 to 200 K is only about 5 Ω·cm, but it increases up to 3 orders of magnitude at 5 K. The analysis shows that the variation of resistivity of Hg0.89Mn0.11Te under the magnetic field is the algebraic sum of the transverse direction magnetoresistance effect and the sp-d exchange interaction effect. TDRME plays major role in the high temperature range. However, with the decrease of temperature, the effect of sp-d EI on the resistivity gradually exceeds that of the transverse direction magnetoresistance effect through the transitive range, and becomes the dominant effect in the temperature range from 5 to 25 K, which leads to the dramatic decrease of resistivity.

Keywords

Hg1-xMn xTe / resistivity / magnetoresistance / transverse direction magnetoresistance effect / sp-d exchange interaction effect

Cite this article

Download citation ▾
Zewen Wang, Wanqi Jie. The effect of magnetic field on resistivity of Hg0.89Mn0.11Te in different temperature range. Journal of Wuhan University of Technology Materials Science Edition, 2015, 30(5): 923-927 DOI:10.1007/s11595-015-1251-1

登录浏览全文

4963

注册一个新账户 忘记密码

References

[1]

Price MW, Scripa RN, Szofran FR, et al. Analysis of Radial Segregation in Directionally Solidified Hg0.89Mn0.11Te [J]. Journal of Crystal Growth, 2004, 273(1-2): 179-189.

[2]

Bodnaruk OO, Ostapov SE, Rarenko IM, et al. Investigations of Transport Phenomena in HgMnTe and HgCdMnTe Monocrystals [J]. Journal of Alloy and Compounds, 2004, 371(1-2): 93-96.

[3]

Kosyachenko LA, Ostapov SE, Markov AV, et al. Electronic Transport Properties of HgMnTe n+–p Junctions [J]. Infrared Physics & Technology, 2003, 44(1): 1-10.

[4]

Rogalski A. Heterostructure Infrared Photovoltaic Detectors[J]. Infrared Physics & Technology, 2000, 41(4): 213-238.

[5]

Kosyachenko LA, Ostapov SE, Markov AV, et al. Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes [J]. Proceedings of SPIE, 2003, 5065: 146-151.

[6]

Samarth N, Furdyna JK. Diluted Magnetic Semiconductors [J]. Proceeding of the IEEE, 1990, 78: 990-1.

[7]

Gille P, Rössner U, Puhlmann N, et al. Growth of Hg1-xMnxTe Crystals by the Travelling Heater Method [J]. Emiconductor Science and Technology, 1995, 10: 353-357.

[8]

Becla P. Advanced Infrared Photonic Devices Based on HgMnTe [J]. Proceedings of SPIE, 1993, 2021: 22-34.

[9]

Nagata S, Galazka RR, Mullin DP, et al. Magnetic Susceptibility, Specific Heat, and the Spin-Glass Transition in Hg1-xMnxTe [J]. Physical Review B, 1980, 22: 3331-3343.

[10]

Dobrowolska M, Dobrowolski W. Temperature Study of Interband Magnetoabsorption in Hg1-xMnxTe Te Mixed Crystals [J]. Journal of Physics C, 1981, 14: 5689-5706.

[11]

Jaczyski M, Kossut J, Gazka RR. Influence of Exchange Interaction on the Quantum Transport Phenomena in Hg1-xMnxTe [J]. Physica Status Solidi (B), 1978, 88(1): 73-85.

[12]

Wojtowicz T, Mycieski A. Magnetic Field Induced Nonmetal-Metal Transition in the Open-Gap Hg1-xMnxTe [J]. Physical B, 1983, 117&118: 476-478.

[13]

Furdyna JK. Diluted Magnetic Semiconductors [J]. Journal of Applied Physics, 1988, 64(4): 29-64.

[14]

Witowski AM, Furdyna JK. Far-infrared Magneto Absorption Studies of Zero-gap Hg1-xMnxSe Crystals [J]. Physical Review B, 1993, 48: 10855-10863.

[15]

Pidgeon CR, Brown RN. Interband Magneto-Absorption and Faraday Rotation in InSb [J]. Physical Review, 1966, 146: 575-583.

[16]

Furdyna JK. Electrical, Optical, and Magnetic Properties of Hg1-x MnxTe [J]. Journal of Vacuum Science and Technology, 1982, 21(1): 220-228.

[17]

Johnson WB, Anderson JR, Stone DR. Transport Measurements on Positive-Gap Hg1-xMnxTe with the Use of an Alternating-Current Technique [J]. Physical Review B, 1984, 29: 6679-6686.

AI Summary AI Mindmap
PDF

112

Accesses

0

Citation

Detail

Sections
Recommended

AI思维导图

/