Synthesis and properties of new infrared nonlinear optical Li₂Ga₂GeS₆ crystal

Abstract

IR Li₂Ga₂GeS₆ nonlinear crystals were directly obtained with the composition of 40GeS₂-30Ga₂S₃-30Li₂S, by the conventional melt-quenching method. The high depth digital image indicated that the obtained Li₂Ga₂GeS₆ crystals showed a big size of 0.3 × 0.25 × 0.3 mm³. It was shown that the compound was very susceptive to H₂O with second harmonic observation. Besides, the glass-forming region of GeS₂-Ga₂S₃-Li₂S system was further studied by the conventional melt-quenching method.GeS₂-Ga₂S₃-Li₂S glass-ceramics containing IR Li₂Ga₂GeS₆ nonlinear nanocrystals were obtained at a more carefully controlled heating rate.

Keywords

IR Li₂Ga₂GeS₆ nonlinear crystals / glass-forming region / size

References

[1] Mitchell K, Ibers J A. Rare-earth Transition-metal Chalcogenides[J]. Chemical Reviews, 2002, 102(6): 1 929-1 952.

[2] Liao J H, Marking G, Hsu K, et al. α-and β-A₂Hg₃M₂S₈ (A= K, Rb; M= Ge, Sn): Polar Quaternary Chalcogenides with Strong Nonlinear Optical Response[J]. Journal of the American Chemical Society, 2003, 125(31): 9 484-9 493.

[3] Jayaraman A, Narayanamurti V, Kasper H, et al. Pressure Dependence of the Energy Gap in Some I-III-VI2 Compound Semiconductors[J]. Physical Review B, 1976, 14(8): 3 516-3 519.

[4] Harasaki A, Kato K. New Data on the Nonlinear Optical Constant, Phase-Matching, and Optical Damage of AgGaS₂[J]. Japanese Journal of Applied Physics, Part 1, 1997, 36(2): 700-703.

[5] Andreev Y M, Badikov V V, Voevodin V G, et al. Radiation Resistance of Nonlinear Crystals at a Wavelength of 9.55 μm[J]. Quantum Electronics, 2001, 31(12): 1 075-1 078.

[6] Andreev Y M, Geiko P P, Badikov V V, et al. Parametric Frequency Converters with LiInSe₂, AgGaGeS₄, HgGa₂S₄ and Hg_0.65Cd_0.35Ga₂S₄ Crystals [J]. Proc. of SPIE, 2003 120-127.

[7] Petrov V, Badikov V, Shevyrdyaeva G, et al. Phase-Matching Properties and Optical Parametric Amplification in Single Crystals of AgGaGeS₄[J]. Optical Materials, 2004, 26(3): 217-222.

[8] Das S, Ghosh C, Gangopadhyay S, et al. AgGaGeS₄ Crystals for Nonlinear Laser Device Applications[J]. Japanese Journal of Applied Physics, 2006, 45(7): 5 795-5 797.

[9] Kim Y, Seo I S, Martin S W, et al. Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li₂Ga₂GeS₆[J]. Chemistry of Materials, 2008, 20(19): 6 048-6 052.

[10] Yamashita M. Formation and Ionic Conductivity of Li₂S-GeS₂-Ga₂S₃ Glasses and Thin Films[J]. Solid State Ionics, 2003, 158(1–2): 151-156.

[11] Liu Q M, Zhang P. IR Li₂Ga₂GeS₆ Nanocrystallized GeS₂-Ga₂S₃-Li₂S Electroconductive Chalcogenide Glass with Good Nonlinearity[J]. Scientific Reports, 2014, 4(5719): 1-4.

[12] Maker P, Terhune R, Nisenoff M, et al. Effects of Dispersion and Focusing on the Production of Optical Harmonics[J]. Physical Review Letters, 1962, 8(1): 21-22.