Structural, optical and electrical properties of Li-doped ZnO thin films influenced by annealing temperature

Abstract

Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Li doped ZnO films annealed at 500–600 °C and the p type ZnO films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.

Keywords

doping defects / physical vapor deposition processes / oxides / semiconducting II-VI materials / heterojunction semiconductor devices

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