PLD preparation of GeS₆ amorphous film and investigation on its photo-induced darkening phenomenon

Abstract

GeS₆ chalcogenide amorphous film was deposited on glass substrate via PLD (pulsed laser deposition) technique. The performance and structure of the film was characterized by XRD (X-ray diffraction), SEM (Scanning Electron Microscopy), EDS (Energy Dispersive Spectroscopy), optical transmission spectra, and Raman spectra, etc. The GeS₆ amorphous film was irradiated by 532 nm linearly polarized light, and its photo-induced darkening was investigated. The results showed that the GeS₆ chalcogenide amorphous film was smooth and compact with uniform thickness and combined with the substrate firmly, and its chemical composition was in consistency with the bulky target. When laser energy was fixed, the transparence of the film declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the film after laser irradiation were observed in this investigation.

Keywords

GeS₆ chalcogenide amorphous film / pulsed laser deposition / photo darkening

References

[1] Ovshinsky SR Reversible Electrical Switching Phenomena in Disordered Structures [J]. Phys. Rev. Lett., 1968, 21(20): 1 450-1 452.

[2] Owen AE, Firth AP, Ewen PJS Photoinduced Changes in the Linear and Non-linear Optical Properties of Chalcogenide Glasses [J]. Philos. Mag. B, 1985, 52: 347

[3] Ewen PJS, Owen AE, Cable M, . High Performance Glasses [M], 1992 London Blackie

[4] Tanaka. Photoinduced Processes in Chalcogenide Glasses [J]. Current Opinion in Solid State & Materials Science(Amorphous Materials), 1996, 1: 567-571.

[5] Lucovsky G, Galener F L, Keezer R C, . Structural Interpretation of the Infrared and Raman Spectra of Glasses in the Alloy System Ge_1−xS_x [J]. Phys. Rev. B, 1974, 10(12): 5 134-5 146.

[6] Hideki O, Kiyoto M, Seinosuke O Raman Scattering and Photodarkening of Amorphous Ge_1−xS_x (0 ⩽ × ⩽0.62) Films [J]. J. Non-Cryst. Solids, 2000, 270: 147-153.

[7] Zarzycji J Glass and Amorphous Materials [M], 2001 Beijing Science Press 330-388.

[8] Mao youde Amorphous Semiconductor [M], 1986 Shanghai Shanghai Jiaotong University Press

[9] Nrqels P, Sleeckx E, Callsetis R, . Structural and Optical Properties of Amorphous Selenium Prepared by Plasma-enhanced CVD [J]. Solid State Commun, 1995, 94: 49-52.

[10] Shtutina S, Klebanov M, Lyubin V, Rosenwsks S, Volterra V Photoinduced Phenomena in Spin-coated Vitreous As₂S₃ and AsSe Films [J]. Thin Solid Films, 1995, 261: 263-265.