Effect of Mg-film thickness on the formation of semiconductor Mg₂Si films prepared by resistive thermal evaporation method

Abstract

Mg films of various thicknesses were deposited on Si(111) substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 °C for 4 h. The effects of Mg film thickness on the formation and structure of Mg₂Si films were investigated. The results showed that the crystallization quality of Mg₂Si films was strongly influenced by the thickness of Mg film. The XRD peak intensity of Mg₂Si (220) gradually increased initially and then decreased with increasing Mg film thickness. The XRD peak intensity of Mg₂Si (220) reached its maximum when the Mg film of 380 nm was used. The thickness of the Mg₂Si film annealed at 400 °C for 4 h was approximately 3 times of the Mg film.

Keywords

Mg film thickness / Mg₂Si films / Mg₂Si films thickness / thermal evaporation / annealing

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