Development in p-type Doping of ZnO

Liping Yu , Qiqiang Zhu , Dayong Fan , Zili Lan

Journal of Wuhan University of Technology Materials Science Edition ›› 2012, Vol. 27 ›› Issue (6) : 1184 -1187.

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Journal of Wuhan University of Technology Materials Science Edition ›› 2012, Vol. 27 ›› Issue (6) : 1184 -1187. DOI: 10.1007/s11595-012-0627-8
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Development in p-type Doping of ZnO

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Abstract

Zinc oxide (ZnO) is a wide band-gap material of the II-VI group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carried out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.

Keywords

ZnO / p-type doping / fabrication method / optoelectronics applicatio

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Liping Yu, Qiqiang Zhu, Dayong Fan, Zili Lan. Development in p-type Doping of ZnO. Journal of Wuhan University of Technology Materials Science Edition, 2012, 27(6): 1184-1187 DOI:10.1007/s11595-012-0627-8

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References

[1]

Ryu Y.R., Zhu S., Look D.C., . Synthesis of p-type ZnO Films[J]. J. Cryst. Growth, 2000, 216(1–4): 330-334.

[2]

Özgür Alivov Y. I., Liu C., . A Comprehensive Review of ZnO Materials and Devices[J]. J. Appl. Phys., 2005, 98: 041301

[3]

Minemoto T., Negami T., Nishiwaki S., . Preparation of Zn1-xMgxO Films by Radio Frequency Magnetron Sputtering[J]. Thin Solid Films, 2000, 372(1–2): 173-176.

[4]

Jin B.J., Bae S.H., Lee S.Y., . Effects of Native Defects on Optical and Electrical Properties of ZnO Prepared by Pulsed Laser Deposition[J]. Mater. Sci. Eng. B, 2000, 71(1–3): 301-305.

[5]

Panigrahy B., Bahadur D. p-type Phosphorus Doped ZnO Nanostructures: An Electrical, Optical, and Magnetic Properties Study[J]. RSC Advances, 2012, 2: 6 222-6 227.

[6]

Guo X.L., Tabata H., Kawai T. p-Type Conduction in Transparent Semiconductor ZnO Thin Films Induced by Electron Cyclotron Resonance N2O Plasma[J]. Optical Materials, 2002, 19(1): 229-233.

[7]

Ryu Y., Lubguban J.A., Lee T.S., . Excitonic Ultraviolet Lasing in ZnO-based Light Emitting Devices[J]. Appl.Phys.Lett., 2007, 90: 131 115-131 118.

[8]

Li P., Deng S., Zhang L., . First-principle Studies on the Conductive Behaviors of Ga, N Single-doped and Ga-N Codoped ZnO[J]. Computational Materials Science, 2010, 50(1): 153-157.

[9]

Yamamoto T., Yoshida H.K. Control of Valence States in ZnO by Codoping Method[J]. Materials Research Society Symposium-Proceedings, 2000, 623: 223-234.

[10]

Santana G., Morales-Acevedo A., Vigil O., . Structural and Optical Properties of (ZnO)x(CdO)1−x Thin Films Obtained by Spray Pyrolysis[J]. Thin Solid Films, 2000, 373(1–2): 235-238.

[11]

Bagnall D.M., Chen Y.F., Zhu Z., . Optically Pumped Lasing of ZnO at Room Temperature[J]. Appl. Phys. Lett., 1997, 70(17): 2 230-2 232.

[12]

Zhang B.Y., Yao B., Li Y.F., . Investigation on the Formation Mechanism of p-type Li-N Dual-doped ZnO[J]. Applied Physics Letters, 2010, 97(22): 222101-1-222101-3.

[13]

Xu Q., Zhang X., Fan W., . Electronic Structures of Wurtzite ZnO, BeO, MgO and p-type Doping in Zn1−xYxO (Y = Mg, Be)[J]. Computational Materials Science, 2008, 44(1): 72-78.

[14]

Pan H.L., Yao B., Yang T., . Electrical Properties and Stability of p-type ZnO Film Enhanced by Alloying with S and Heavy Doping of Cu[J]. Appl.Phty..Lett., 2010, 97(14): 142101-1-142101-3.

[15]

Kim H., Gilmore C.M., Horwitz J.S., . Transparent Conducting Aluminum-doped Zinc Oxide Thin Films for Organic Light-emitting Devices[J]. Appl. Phys. Lett., 2000, 76(3): 259-261.

[16]

Lu J., Ye Z., Wang L., . Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate[J]. Chin. Phys. Lett., 2002, 19(10): 1 494-1 497.

[17]

Aoki T., Hatanaka Y., Look D.C. ZnO Diode Fabricated by Excimer-laser Doping[J]. Appl. Phys. Lett., 2000, 76(22): 3 257-3 258.

[18]

Choi Y.S., Kang J.W., Hwang D.K., . Recent Advances in ZnO-based LEDs[J]. IEEE Trans. Electron Dev., 2010, 57: 26-41.

[19]

Ching-Ting Lee. Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes[J]. Materials, 2010, 3: 2 218-2 259.

[20]

Tay C. B., Chua S. J., Loh K. P. Stable p-Type Doping of ZnO Film in Aqueous Solution at Low Temperatures[J]_. J. Phys. Chem. C, 2010, 114: 9 981-9 987.

[21]

Morales E. H., He Y., Vininchenko M., . Surface Structure of Sn-doped In2O3(111) Thin Films by STM[J]. New J. Phys., 2008, 10: 125030

[22]

Klingshirn C. ZnO: From Basics Towards Applications[J]. Phys. Stat. Sol. B, 2007, 244: 3 027-3 073.

[23]

Ryu Y., Lee T.-S., Lubguban J.A., . Next Generation of Oxide Potonic Devices: ZnO-based Ultraviolet Light Emitting Diodes[J]. Appl. Phys. Lett., 2006, 88: 241108

[24]

Park C.H., Zhang S.B., Wei S.H. Origin of p-type Doping Difficulty in ZnO: The Impurity Perspective[J]. Phys. Rev. B, 2002, 66: 073202

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