Electroluminescence orientation in InGaN/GaN LED on nano-patterned sapphire by MOCVD

Tianya Tan; Mitsuaki Tohno; Masakazu Matsumoto; Yoshiki Naoi; Shiro Sakai

doi:10.1007/s11595-012-0617-x

Journal of Wuhan University of Technology Materials Science Edition ›› 2012, Vol. 27 ›› Issue (6) : 1137 -1138. DOI: 10.1007/s11595-012-0617-x

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Electroluminescence orientation in InGaN/GaN LED on nano-patterned sapphire by MOCVD

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Abstract

A 385 nm InGaN/GaN LED on the sapphire with the nano-pattern was fabricated and its electroluminescence property was investigated in a three-dimensional (3D) space. The experimental results showed that the luminescent intensity of the LED was obviously oriented based on the nano-pattern of the sapphire substrate. And the optical interference was used to explain the luminescence orientation of the LED on the nano-patterned substrate.

Keywords

LED / nano-pattern / GaN / electroluminescence

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Tianya Tan, Mitsuaki Tohno, Masakazu Matsumoto, Yoshiki Naoi, Shiro Sakai. Electroluminescence orientation in InGaN/GaN LED on nano-patterned sapphire by MOCVD. Journal of Wuhan University of Technology Materials Science Edition, 2012, 27(6): 1137-1138 DOI:10.1007/s11595-012-0617-x

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