Influence of CH₃SiCl₃ consistency on growth process of SiC film by kinetic monte carlo method

Abstract

CH₃SiCl₃ (MTS)-H₂-Ar system has been applied to prepare SiC film with chemical vapor deposition (CVD) method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughness, thickness and relative density brought by MTS consistency has been mainly discussed with kinetic monte carlo (KMC) method. The simulation results show that there is a certain scale for mol ratio of H₂ to MTS (H₂/MTS) with different deposition temperature. When MTS consistency increases, growth rate and surface roughness of three facets all increase, which manifests approximate linearity relationship. Thickness of three facets also increases while increasing trend of three facets thickness is different obviously. Although relative density of three facets all increases, increasing trend shows a little difference with MTS consistency increasing.

Keywords

SiC film / chemical vapor deposition / kinetic monte carlo

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