Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation

Renxu Jia; Yuming Zhang; Yimen Zhang

doi:10.1007/s11595-012-0476-5

Journal of Wuhan University of Technology Materials Science Edition ›› 2012, Vol. 27 ›› Issue (3) : 415 -417. DOI: 10.1007/s11595-012-0476-5

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Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation

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Abstract

In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO₂ resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600 °C annealing, meanwhile, deep level defects are decreased.

Keywords

4H-SiC Homo-epilayers / deep level defects / carbon ion-implantation

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Renxu Jia, Yuming Zhang, Yimen Zhang. Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation. Journal of Wuhan University of Technology Materials Science Edition, 2012, 27(3): 415-417 DOI:10.1007/s11595-012-0476-5

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References

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[1]	Ryu S. H., Kornegay K. T. Digital CMOS IC’s in 6H-SiC Operating on a 5-V Power Supply [J]. IEEE Trans.Electron Devices, 1998, 45: 45-53.

[2]	Waldrop J. R., Grant R. W., Wang Y. C., . Metal Schottky Barrier Contacts to Alpha 6H-SiC [J]. J. Appl. Phys., 1992, 72: 4 757-4 760.

[3]	Zhang J., Li X., Alexandrov P., . Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors [J]. IEEE Trans.Electron Devices, 2008, 55(8): 1 899-1 904.

[4]	Howell R. S., Buchoff S., Van Campen S., . A 10-kV Large-area 4H-SiC Power DMOSFET with Stable Subthreshold Behavior Independent of Temperature [J]. IEEE Trans.Electron Devices, 2008, 55(8): 1 807-1 811.

[5]	Omura I, Tsukuda M, Saito W, et al. High Power Density Converter using SiC-SBD [C]. Power Conversion Conference-Nagoya, 2007

[6]	Funaki T., Balda J. C., Junghans, . Power Conversion with SiC Devices at Extremely High Ambient Temperatures [J]. IEEE Trans Power Electronics, 2007, 22(4): 1 321-1 325.

[7]	Ellison A., Magnusson B., Son N. T., . HTCVD Grown Semiinsulating SiC Substrates [J]. Mater. Sci. Forum, 2003, 33: 433-436.

[8]	Muller S. G., Brady M. F., Brixius W. H., . Sublimation-Grown Semiinsulating SiC for High Frequency Devices [J]. Mater. Sci. Forum, 2003, 39: 433-437.

[9]	Zvanut M. E., Konovalov V. V. The Level Position of a Deep Intrinsic Defect in 4H-SiC Studied by Photo Induced Electron Paramagnetic Resonance [J]. Appl. Phys. Lett., 2002, 80: 410-414.

[10]	Jia R. X., Zhang Y. M., Zhang Y. M., . Nitrogen Doped 4H-SiC Homoepitaxial Layers Grown by CVD [J]. Acta Phys.Sin., 2008, 57(7): 4 456-4 458.

[11]	Carlos W. E., Glaser E. R., Shanabrook B. V. Optical and Magnetic Resonance Signatures of Deep Levels in Semi-insulating 4H-SiC [J]. Physica B: Condensed Matter, 2003, 151: 340-343.

[12]	Son N. T., Magnusson B., Zolnai Z., . Defects in Semi-insulating SiC Substrates[J]. Mater. Sci. Forum, 2004, 437: 457-460.

[13]	Kimoto T., Nakajima T., Matsunami H., . Formation of Semiinsulating 6H-SiC Layers by Vanadium Ion Implantations [J]. Appl. Phys. Lett., 1996, 69: 1 113-1 116.

[14]	Jia R., Zhang Y., Zhang Yuming. Deep Level Defects in Unintentionally Doped 4H-SiC Homoepitaxial Layer[J]. Chinese Journal of Semiconductors, 2009, 30(3): 033003-1-033003-3.