Low-temperature sintering and microwave dielectric properties of Ba₂Ti₃Nb₄O₁₈ ceramics

Abstract

The effects of CuO and H₃BO₃ additions on the low-temperature sintering, microstructure, and microwave dielectric properties of Ba₂Ti₃Nb₄O₁₈ ceramics were investigated. The addition of less amount of CuO (< 1 wt%) considerably facilitated the densification of Ba₂Ti₃Nb₄O₁₈ ceramics. Appropriate addition of H₃BO₃ (< 3.5 wt%) remarkably improved the microwave dielectric properties of ceramics. The addition of H₃BO₃ and CuO successfully reduced the sintering temperature of Ba₂Ti₃Nb₄O₁₈ ceramics from 1300 to 1050 °C. Ba₂Ti₃Nb₄O₁₈ ceramics sintered at 1 050 °C for 4 h with the addition of 1.0 wt% CuO and 3.5 wt% H₃BO₃ exhibited good microwave dielectric properties: ɛ _r = 33.74, Q·f = 13 812 GHz, and τ _f = −5.35 ppm/°C at about 5.0 GHz.

Keywords

Ba₂Ti₃Nb₄O₁₈ ceramics / microwave dielectric properties / low-temperature sintering / CuO and H₃BO₃ additions

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