Magnetism regulation of (In1−xFe x)2O3 semiconductors prepared by sol-gel method

Hong Gao; Zhigang Sun; Wei Duan; Yanbing Chen; Mi Li

doi:10.1007/s11595-010-1020-0

Journal of Wuhan University of Technology Materials Science Edition ›› 2010, Vol. 25 ›› Issue (1) : 20 -23. DOI: 10.1007/s11595-010-1020-0

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Magnetism regulation of (In_1−xFe_x)₂O₃ semiconductors prepared by sol-gel method

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Abstract

Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (x=0, 0.05, 0.1, 0.2 and 0.3) on glass substrate were prepared by sol-gel method. The XRD results demonstrate that the solubility of Fe ions in In₂O₃ matrix is around 20%, above which impurity phase can be observed. The transmittance of the samples with x=0, 0.05, 0.1 and 0.2 are above 80% in the visible region while the transimittance of the glass is 90%. The transmittance curves slightly red-shifts as x increasing. All of the samples except x=0 are ferromagnetic at room temperature. The highest saturation magnetization moment is reached in the sample x=0.2 with 330 emu/cm³, and the coercive force is 169 Oe which is also the largest in our samples. The results indicate that the addition of Fe ions could tune the structure, the ferromagnetism and optical property in the In₂O₃ matrix.

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Fe doped In₂O₃ / thin films / magnetism / sol-gel

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Hong Gao, Zhigang Sun, Wei Duan, Yanbing Chen, Mi Li. Magnetism regulation of (In_1−xFe_x)₂O₃ semiconductors prepared by sol-gel method. Journal of Wuhan University of Technology Materials Science Edition, 2010, 25(1): 20-23 DOI:10.1007/s11595-010-1020-0

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