Zn1−xCo xO diluted magnetic semiconductor bulk prepared by hot pressing

Wensong Lin , Ningxiang Fang , Chenxin Ouyang , Wei Wang

Journal of Wuhan University of Technology Materials Science Edition ›› 2010, Vol. 25 ›› Issue (3) : 527 -529.

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Journal of Wuhan University of Technology Materials Science Edition ›› 2010, Vol. 25 ›› Issue (3) : 527 -529. DOI: 10.1007/s11595-010-0036-9
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Zn1−xCo xO diluted magnetic semiconductor bulk prepared by hot pressing

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Abstract

Zn1−xCo xO diluted magnetic semiconductor bulks were prepared by hot pressing. Mixed powders of pure ZnO and CoO were compacted under pressure of 10 MPa at the temperature of 1 073 K. Then the samples were annealed in vacuum at the temperature from 673 K to 873 K for 10 h. The crystal structure and magnetic properties of Zn1−xCo xO bulks have been investigated by X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). X-ray photoelectron spectroscopy (XPS) was used to study chemical valence of zinc and cobalt in the samples. The results showed that Zn1−xCo xO samples had c-axis oriented wurtzite symmetry, neither cobalt or cobalt oxide phase was found in the samples if x was less than 0.15. Zn and Co existed in Zn0.9Co0.1O sample in Zn2+ and Co2+ states. The results of VSM experiment proved the room temperature ferromagnetic properties (RTFP) of Co-doped ZnO samples. The saturation magnetization and the coercivity of Zn0.9Co0.1O sample, observed in the M-H curve, were about 0.20 emu/g and 200 Oe, respectively.

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hot pressing / diluted magnetic semiconductors / Zn1−xCo xO

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Wensong Lin, Ningxiang Fang, Chenxin Ouyang, Wei Wang. Zn1−xCo xO diluted magnetic semiconductor bulk prepared by hot pressing. Journal of Wuhan University of Technology Materials Science Edition, 2010, 25(3): 527-529 DOI:10.1007/s11595-010-0036-9

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