Preparation and characteristics of Cu/Al2O3/MgF2/Au tunnel junction

Maoxiang Wang; Wei Yu; Jianhua Yu; Youwen Zhang; Xuping Zhang

doi:10.1007/s11595-009-5721-1

Journal of Wuhan University of Technology Materials Science Edition ›› 2009, Vol. 24 ›› Issue (5) : 721 -724. DOI: 10.1007/s11595-009-5721-1

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Preparation and characteristics of Cu/Al₂O₃/MgF₂/Au tunnel junction

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Abstract

The fabrication process of Cu/Al₂O₃/MgF₂/Au double-barrier metal/insulator/metal junction (DMIMJ) was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250–700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al₂O₃/Au junction. The light emission efficiency of this junction ranges from 0.7×10⁻⁵–2.0×10⁻⁵, which is 1 to 2 orders higher than that of the single-barrier Al/Al₂O₃/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.

Keywords

double-barrier junction / light emission / negative resistance phenomenon / electron resonant tunneling

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Maoxiang Wang, Wei Yu, Jianhua Yu, Youwen Zhang, Xuping Zhang. Preparation and characteristics of Cu/Al₂O₃/MgF₂/Au tunnel junction. Journal of Wuhan University of Technology Materials Science Edition, 2009, 24(5): 721-724 DOI:10.1007/s11595-009-5721-1

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