Synthesis and sintering of Mg2Si thermoelectric generator by spark plasma sintering

Meijun Yang; Lianmeng Zhang; Qiang Shen

doi:10.1007/s11595-007-6870-8

Journal of Wuhan University of Technology Materials Science Edition ›› 2008, Vol. 23 ›› Issue (6) : 870 -873. DOI: 10.1007/s11595-007-6870-8

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Synthesis and sintering of Mg₂Si thermoelectric generator by spark plasma sintering

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Abstract

Raw Mg, Si powder were used to fabricate Mg₂Si bulk thermoelectric generator by spark plasma sintering (SPS). The optimum parameters to synthesize pure Mg₂Si powder were found to be 823 K, 0 MPa, 10 min with excessive content of 10wt% Mg from the stoichiometric Mg₂Si. Mg₂Si bulk was synthesized and densified simultaneously at low temperature (823 K) and high pressure (higher than 100 MPa) from the raw powder, but Mg, Si could not react completely, and the sample was not very dense with some microcracks on the surface. Then, Mg, Si powder reacted at 823 K, 0 MPa, 10 min in SPS chamber to form Mg₂Si green compact, again sintered by SPS at 1023 K, 20 MPa, 5 min. The fabricated sample only contained Mg₂Si phase with fully relative density.

Keywords

Mg₂Si / spark plasma sintering(SPS)

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Meijun Yang, Lianmeng Zhang, Qiang Shen. Synthesis and sintering of Mg₂Si thermoelectric generator by spark plasma sintering. Journal of Wuhan University of Technology Materials Science Edition, 2008, 23(6): 870-873 DOI:10.1007/s11595-007-6870-8

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References

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[1]	Jun-ichi T, Hiroyasu K. Thermoelectric Properties of Sb-doped Mg₂Si Semiconductors [J]. Intermetallics., 2007, (15):1202–1207

[2]	Zhang L M, Gang Y G. Synthesis of Mg₂Si_1−xGe_x Thermoelectric Compound by Solid Phase Reaction [J]. Mater. Sci. Eng. B., 2001, (86):195–199

[3]	Yoshinaga M, Iida T. Bulk Crysta Growth of Mg₂Si by the Vertical Bridgmam Method [J]. Thin Solid Film, 2004, (461): 86–89

[4]	Noda Y, Kon H, Furukawa Y. Preparation and Thermoelectric Properties of Mg₂Si_1−xGe_x (∼0.0–0.4) Solid Solution Semiconductors[J]. Materials Transactions, 1992, (33): 845–847

[5]	Xiong W, Qin X Y. Preparation and Microstructural Characterization of Nanocrystalline Mg2Si Intermetallic Compound Bulk[J]. The Chinese Journal of Nonferrous Metals, 2005, (15):380–384

[6]	Niu X P, Li L. Formation of Magnesium Silicide by Mechanical Alloying[J]. Materials Letters, 1997, (33):71–73

[7]	Michael R, Jurgen S. Thermoelectric Properties of Sintered Magnesium Compounds[C]. In: 15^th International Conference on Thermoelectrics, 1996:133–136

[8]	Shida T, Sugihara S. Thermoelectric Properties of Magnesium Silicide Processed by Powdered Elements Plasma Activated Sintering Method[C]. In: Proceedings of the 16^th International Conference on Thermoelectric Energy Conversion, 1997:275–279

[9]	Yang M J, Zhang D M. Fabrication and properties of SiC_p/Al composites by pulsed electric current sintering[J]. Journal of Materials Science, 2005:5029–5031