Effect of heating on hydrogen retention in C-SiC coatings

Abstract

C-SiC coatings were prepared on stainless steel with magnetron sputtering deposition followed by Argon ion bombardment. These samples were implanted by 5 keV hydrogen ion beam. SEM, SIMS and IR transmission were utilized to study the mechanism and the stability of hydrogen retention of C-SiC coatings. Comparison was made between the samples with and without removing Argon by heating then followed by H⁺ ion implantation. The results show that removal of argon by heating can improve the hydrogen retention of the C-SiC coatings. The thermal stability of hydrogen barrier for the C-SiC coatings was investigated, it is found that the property of hydrogen retention for the C-SiC coatings is still good after heating at 573 K, but it becomes worse after heating at 873 K, and it loses after heating at 1 173 K.

Keywords

C-SiC coatings / hydrogen retention / thermal stability

References

[1] Nakamura H., Nishi M. Experimental Evaluation of Tritium Permeation Through Stainless Steel Tubes of Heat Exchanger from Primary to Secondary Water in ITER[J]. Journal of Nuclear Materials, 2004, 329–333: 183-187.

[2] Racault C., Serra E., Fenici P. Formation of Permeation Barriers on Ceramic SiC/SiC Composites[J]. Journal of Nuclear Materials, 1996, 233–237: 1 262-1 265.

[3] Oya Y., Onishi Y., Kodama H., . Dynamic Hydrogen Isotope Behavior and Its Chemical States in SiC by XPS and TDS Technique[J]. Journal of Nuclear Materials, 2005, 337–339: 595-599.

[4] Hasegawa A., Miwa S., Nogamia S., . Study of Hydrogen Effects on Microstructural Development of SiC Base Materials Under Simultaneous Irradiation with He-and Si-ion Iirradiation Conditions[J]. Journal of Nuclear Materials, 2004, 329–333: 582-586.

[5] Huang N. K., Xiong Q. Study in Chemical Bonding States of SiC Films before and after Hydrogen Ion Irradiation[J]. J. Nuclear Materials, 2003, 321: 152-157.

[6] Hino a T., Hirohata a Y., Yamauchi Y., . Plasma Material Interaction Studies on Low Activation Materials Used for Plasma Facing or Blanket Component[J]. Journal of Nuclear Materials, 2004, 329–333: 673-677.

[7] Huang N. K., Yang B., Xiong Q., . Behaviors of Hydrogen in C-SiC Films with IR and SIMS Analyses[J]. Nuclear Instruments and Methods in Physics Research B, 2002, 195: 344-349.

[8] Huang N., Yang B., Wang D. Electron Spectroscopy Studies on SiC Films before and after Hydrogen Ion Irradiation[J]. Journal of Wuhan University of Technology-Mater, 2005, 20(2): 1-4.

[9] Huang N. K., Yang B. Behaviors of Hydrogen in C-SiC Films with IR and SIMS Analyses[J]. Nuclear Instruments and Methods in Physics Research B, 2002, 195: 344-349.

[10] Baia Neto A. L., Camargo S. S. Jr, Carius R., . Annealing Effects on Stoichiometric a-SiC: H Films[J]. Surface and Coatings Technology, 1999, 120–121: 395-400.

[11] Huran J., Safrankova J. Preparation of Hydrogenated Amorphous Silicon Carbide Thin Films by Plasma Enhanced Chemical Vapour Deposition[J]. Vacuum, 1998, 50: 103-105.

[12] Yamauchi Y., Hirohata Y., Hino T. Hydrogen and Helium Retention Properties of B4C and SiC Converted Graphites[J]. Fusion Engineering and Design, 1998, 39–40: 427-432.

[13] Hino T., Akiba M. Japanese Developments of Fusion Reactor Plasma Facing Components[J]. Fusion Engineering and Design, 2000, 49–50: 97-105.