Crystallization and electrical properties of (Ba0.4Pb0.3)Sr0.3TiO3 thin film by pulsed laser deposition

Weiming Yang; Jun Yu; Linxiang He; Shen Zhou; Guang Yang

doi:10.1007/s11595-006-4634-5

Journal of Wuhan University of Technology Materials Science Edition ›› 2007, Vol. 22 ›› Issue (4) : 634 -637. DOI: 10.1007/s11595-006-4634-5

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Crystallization and electrical properties of (Ba_0.4Pb_0.3)Sr_0.3TiO₃ thin film by pulsed laser deposition

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Abstract

(Ba_0.4Pb_0.3)Sr_0.3TiO₃ thin films were fabricated via pulsed laser deposition (PLD) technique on Pt/TiO₂/SiO₂/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P _s, remnant polarization P _r and coercive field E _c were about 4.6 μC/cm², 2.5 μC/cm² and 23 kV/cm (the coercive voltage is 0.7 V), respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories (NvFeRAMs).

Keywords

(Ba_0.4Pb_0.3)Sr_0.3TiO₃ thin film / PLD / dielectric properties / ferroelectric properties

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Weiming Yang, Jun Yu, Linxiang He, Shen Zhou, Guang Yang. Crystallization and electrical properties of (Ba_0.4Pb_0.3)Sr_0.3TiO₃ thin film by pulsed laser deposition. Journal of Wuhan University of Technology Materials Science Edition, 2007, 22(4): 634-637 DOI:10.1007/s11595-006-4634-5

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