Plasma-enhanced chemical vapordeposition SiO₂ film after ion implantation induces quantum well intermixing

Abstract

A method of QWI (quantum well intermixing) realizing through plasma-enhanced chemical vapordeposition (PECVD) SiO₂ film following ion implantation was investigated. PECVD 200 nm SiO₂ film after 160 keV phosphorus (P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780°C for 30 seconds under N₂ flue, the blue shift of photoluminescence (PL) peak related to implanted dose: 1×10¹¹ 1×10¹², 1×10¹³, 3×10¹³, 7×10¹³ ion/cm² is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO₂ film. So, the blue shift results mainly from ion implantation. However, SiO₂ film also may promote the quantum well intermixing.

Keywords

quantum well intermixing / P ion implantation / PECVD SiO₂ / PL blue shift

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