First-principles studies the lattice constants and the electronic structures of diluted magnetic semiconductors (In, Mn) As

Abstract

Lattice constants and electronic structures of diluted magnetic semiconductors (In, Mn) As were investigated using the first principles LMTO-ASA band calculation by assuming supercell structures. Three concentrations of the3d impurities were studied (x=1/2, 1/4, 1/8). The effect of varying Mn concentrations on the lattice constants and the electronic structures are shown.

Keywords

diluted magnetic semiconductor / electronic band calculation / lattice constants / electronic structures

References

[1] Munekata H, Ohno H, von Molnár S, . Diluted Magnetic III–V Semiconductors [J]. Phys. Rev. Lett., 1989, 63: 1849-1852.

[2] Ohno H, Munekata H, Penney T, . Magnetotransport Properties ofp-type (In, Mn) As Diluted Magnetic III–V Semiconductors [J]. Phys. Rev. Lett., 1992, 68: 2664-2667.

[3] Ohno H. Making Nonmagnetic Semiconductors Ferromagnetic [J]. Science, 1998, 281: 951-951.

[4] Koshihara S, Oiwa A, Hirasawa M, . Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III–V Semiconductor Heterostructures of (In, Mn) As/GaSb [J]. Phys. Rev. Lett., 1997, 78: 4617-4620.

[5] Munekata H, Abe T, Koshihara S, . Light-induced Ferromagnetism in III–V-based Diluted Magnetic Semiconductor Heterostructures[J]. J. Appl. Phys., 1997, 81: 4862-4864.

[6] Oiwa A, Slupinski T, Munekata H. Control of Magnetization Reversal Process by Light Illumination in Ferromagnetic Semiconductor Heterostructurep-(In, Mn) As/GaSb [J]. Appl. Phys. Lett., 2001, 78: 518-520.

[7] Ohno H, Chiba D, Matsukura F, . Electric-field Control of Ferromagnetism. Nature, 2000, 408: 944-946.

[8] Blattner A J, Lensch J, Wessels B W. Growth and Characterization of OMVPE Grown (In, Mn) As Diluted Magnetic Semiconductor[J]. J. Electron. Mater., 2001, 30: 1408-1411.

[9] Akai H. Ferromagnetism and Its Stability in the Diluted Magnetic Semiconductor (In, Mn) As[J]. Phys. Rev. Lett., 1998, 81: 3002-3005.

[10] Anderson O K, Jepsen O. First-Principles Tight-Binding Theory[J]. Phys. Rev. Lett., 1984, 53: 2571-2574.

[11] Anderson O K, Pawlouska Z, Jepsen O. Illustration of the Linear-muffin-tin-orbital Tight-binding Representation: Compact Orbitals and Charge Density in Si[J]. Phys. Rev. B, 1986, 34: 5253-5269.

[12] Nowak J, Anderson O K, Fujiwara T, . Electronic-structure Calculations for Amorphous Solids Using the Recursion Method and Linear Muffin-tin Orbitals: Application to Fe₈₀B₂₀[J]. Phys. Rev. B, 1991, 44: 3577-3598.

[13] Wei Shuyi, Ma Li, Yang Zongxian, . Electronic Structure and Characteristic of Co Chemisorption on Si (100) Surface[J]. Chinese Journal of Semiconductor, 2003, 24(10): 1040-1043.

[14] Wei Shuyi, Wang Tianxing, Yang Zongxian, . First-Principle Studies for the Electronic Structures of Diluted Magnetic Semiconductors (Ga, Fe) As[J]. Commun. Theor. Phys., 2003, 40: 499-502.

[15] Yang Zongxian, Zhang Kaiming, Ke Sanhuang, . The Electronic Structure of Mn on GaAs (001) Surface [J]. Phys. Rev. B., 1997, 56: 6727-6731.

[16] Zhang Gaoke, Ouyang Shixi, Wu Jindong, . Effect of Doping on the Structure and Properties of Some Tungsten Bronze Type Niobate Crystals[J]. J. Wuhan University of Technology-Mater. Sci. Ed., 2002, 24(2): 9-11.

[17] Jain Manish, Kronik Leeor, James R, . Electronic Structure and Spin Polarization of Mn-Containing Dilute Magnetic III–V Semiconductors[J]. Phys. Rev. B, 2001, 64: 245205-245222.