UV-vis and photoluminescent spectra of TiO2 films

Zhao Qing-nan , Li Chun-ling , Liu Bao-shun , Zhao Xiu-jian

Journal of Wuhan University of Technology Materials Science Edition ›› 2003, Vol. 18 ›› Issue (3) : 36 -39.

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Journal of Wuhan University of Technology Materials Science Edition ›› 2003, Vol. 18 ›› Issue (3) : 36 -39. DOI: 10.1007/BF02838454
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UV-vis and photoluminescent spectra of TiO2 films

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Abstract

TiO2 fims have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0. 10 Pa.to 0.65 Pa. The transmittance (UV-vis) and photoluminescence (PL) spectra of the films were recorded. The results of the UV-vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O2)≥0.15 Pa, the band gap increased from 3.48 eV to 3.68eV for direct transition and from 3.27 eV to 3.34 eV for indirect transition with increasing the oxygen partial pressure. The PL spectra show convincingly that the transition for films was indirect, and there were some oxygen defect energy levels at the band gap of the films. With increasing the O2 partial pressure, the defect energy levels decreased. For the films sputtered at 0.35 and 0.65 Pa there were two defect energy levels at 2.63 eV and 2.41 eV, corresponding to 0.72 eV and 0.94 eV below the conduction band for a band gap of 3.35 eV, respectively. For the films sputtered at 0.10 Pa and 0.15 Pa, there was an energy band formed between 3.12 eV and 2.06 eV, corresponding to 0.23 eV and 1.29 eV below the conduction band.

Keywords

TiO2 films / indirect transition / defect energy level / sputtering

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Zhao Qing-nan, Li Chun-ling, Liu Bao-shun, Zhao Xiu-jian. UV-vis and photoluminescent spectra of TiO2 films. Journal of Wuhan University of Technology Materials Science Edition, 2003, 18(3): 36-39 DOI:10.1007/BF02838454

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