Solid state reaction synthesis and thermoelectric properties of Mg₂Si doped with Sb and Te

Abstract

Doped with Sb and Te, Mg₂ Si based compounds were prepared respectively by solid state reaction at 823K for 8h. Effects of dopants of Sb and Te on the structure and thermoelectric properties of the compounds were investigated. By calculating the values of the electrical conductivity for Sb-doped sample, the mechanism of electric conduction at 625 K is different. The figure of merit for sample doped with 0.4wt% Te at 500K is 2.4×10⁻³W/mK², and it reaches 3.3×10⁻³ W/mK² at 650K for the sample doped with 0.5wt% Sb. The values are more than 1.4 times and 2.3 times of the pure Mg₂Si sample.

Keywords

solid state reaction / doping of Sb and Te / thermoelectric properties

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