Ultra-low temperature anodic bonding of silicon and glass based on nano-gap dielectric barrier discharge

Abstract

The article improves the process of dielectric barrier discharge (DBD) activated anode bonding. The treated surface was characterized by the hydrophilic surface test. The results showed that the hydrophilic angle was significantly reduced under nano-gap conditions and the optimal discharge voltage was 2 kV Then, the anodic bonding and dielectric barrier discharge activated bonding were performed in comparison experiments, and the bonding strength was characterized by tensile failure test. The results showed that the bonding strength was higher under the nano-gap dielectric barrier discharge. This process completed 110 °C ultra-low temperature anodic bonding and the bonding strength reached 2 MPa. Finally, the mechanism of promoting bonding after activation is also discussed.

Keywords

dielectric barrier discharge / anodic bonding / ultra-low temperature

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