Numerical simulation of chemical vapor deposition reaction in polysilicon reduction furnace

Abstract

Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H₂ mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H₂ mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl₃ conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H₂ mole fraction is 0.8-0.85. With the growth of silicon rod height, SiHCl₃ conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl₃ conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.

Keywords

polysilicon reduction furnace / chemical vapor deposition / silicon growth rate

References

[1] JiangX, JiangR-h, ZhouH-wei. A very competitive polysilicon industry throughout the world [J]. Advanced Materials Industry, 2012, 6: 28-36

[2] LuqueAHandbook of photovohaic science and engineering [M], 2010New YorkJohn Wiley & Sons Inc167-172

[3] LiuX-f, WangLing. Analysis and comparison of the chemical preparation methods of polysilicon [J]. Advanced Materials Industry, 2011, 6: 65-69.

[4] CosoG D, CanizoC D, LuqueA. Disclosing the polysilicon deposition process [C]//. The 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 20101216-1219

[5] HeE, XieG, HouY-q, LinY, YuX-hua. Thermo-dynamic analysis of SiHCl3 hydrogen reduction process [J]. Chemical Engineering, 2011, 39(11): 39-43

[6] GuanJ, LaiX-d, LiuD-q, WangJ-lu. The temperature simulation in large-scale polycrystalline silicon furnace [J]. Machinery Design & Manufacture, 2009, 4: 95-97

[7] LingM, LaiX-d, LiuD-qi. The research of the radiative heat transfer models for the hearth inside polycrystalline silicon reduction furnace [J]. Machinery Design & Manufacture, 2009, 4: 125-127

[8] YaoX, WangS-f, YanD-zhou. Three-dimensional numerical simulation and optimization of polysilicon reduction furnace based on fluent [J]. Energy Saving of Non-ferrous Metallurgy, 2011, 4: 48-52

[9] WangZ-s, HuangZ-j, QinP, LeiL-g, YinY-x, DaiX-yan. Numerical simulation of polysilicon rods’ growth environment in Siemens CVD reactor [J]. Journal of Synthetic Crystals, 2012, 41(2): 507-512

[10] HuangZ-q, LiuC-j, YuanX-gang. Numerical simulation of flow and heat transfer in a novel polysilicon reduction furnace [J]. CIESC Jorunal, 2013, 64(2): 484-489

[11] SunPengStudy on polysilicon reduction furnace’s flow field and temperature field through numerical simulation and energy analysis [D], 2012WuhanHuazhong University of Science and Technology

[12] ZhangH-q, MaoL-r, ZhouJ-w, ChenJ-biao. Numerical simulation and process improvement of polysilicon reduction furnace’s flow field [J]. China’s Solar Energy, 2009, 7: 37-40

[13] ZhangP, WangW-w, DongH-h, WuY-l, ChenG-h, LiJ-long. Numerical simulation of the chemical vapor deposition of polocrystalline silicon in a trichlorosilane and hydrogen system [J]. Journal of Synthetic Crystals, 2010, 39(2): 494-499

[14] ZhangP, WangW-w, FanJ-l, ChenG-h, LiJ-long. Numerical simulation of the chemical vapor deposition of polycrystalline silicon in a 3D furnace [J]. Acta Energiae Solaris Sinica, 2012, 33(3): 511-516

[15] HuangG-q, MaoJ-n, WangH-x, HuaChao. 3-D CVD model of polysilicon in trichlorosilane-hydrogen system [J]. Journal of Synthetic Crystals, 2012, 41(3): 680-686

[16] MaoJ-nanSimulation and optimization of polysilicon reduction process [D], 2012TianjinTianjin University

[17] CosoG D, CanizoC D, LuqueA. Chemical vapor deposition model of polysilicon in a trichlorosilane and hydrogen system [J]. Electrochem Society, 2008, 155(6): 485-491

[18] HabukaH, NagoyaT, MayusumiM, KatayamaM, ShimadaM, OkuyamaK. Model on transport phenomena and epitaxial growth of silicon thin film in SiHC1₃-H₂ system under atmospheric pressure [J]. Crystal Growth, 1996, 169(1): 61-72

[19] HabukaH, AoyamaY, AkiyamaS, OtsukaT, QuW-f, ShimadaM, OkuyamaK. Chemical process of silicon epitaxial growth in a SiHC1₃-H₂ system [J]. Crystal Growth, 1999, 207(1/2): 77-86

[20] KeZ-p, YangZ-g, LiuX, ZongW-ting. Downfallen of polysilicon filaments in polycrystailine silicon CVD reactor [J]. Semiconductor Technology, 2010, 35(10): 994-998