Preparation and characterization of ultrananocrystalline diamond films in H2/Ar/CH4 gas mixtures system with novel filament structure

Jie Feng , Sha-sha Li , Hao Luo , Qiu-ping Wei , Bing Wang , Jian-guo Li , Dong-ping Hu , Jun Mei , Zhi-ming Yu

Journal of Central South University ›› 2015, Vol. 22 ›› Issue (11) : 4097 -4104.

PDF
Journal of Central South University ›› 2015, Vol. 22 ›› Issue (11) : 4097 -4104. DOI: 10.1007/s11771-015-2955-2
Article

Preparation and characterization of ultrananocrystalline diamond films in H2/Ar/CH4 gas mixtures system with novel filament structure

Author information +
History +
PDF

Abstract

Diamond films were prepared by hot filament chemical vapor deposition (HFCVD) in a gas mixtures system of methane, argon and hydrogen. The composition and morphology in different deposition pressures and filament structures were investigated, as well as the friction and wear-resistant properties. The sp3-bonded content was measured and nano-mechanics properties were also tested. Results of atomic force microscopy and X-ray photoelectron spectroscopy show that the diamond films whose surface roughness is less than 10 nm and sp3-bonded content is greater than 70% can be prepared by bistratal filament structure with optimized proportion of Ar. It is also shown that the friction coefficient of diamond films is 0.13 and its wear-resistant property is excellent. Nano-mechanics of films shows that its elastic modulus is up to 650 MPa and hardness can reach higher than 60 GPa. The diamond films with excellent performance have a broad application prospect in microelectromechanical systems (MEMS).

Keywords

ultrananocrystalline diamond / hot filament chemical vapor deposition (HFCVD) / nano-mechanics properties / bistratal filament structure

Cite this article

Download citation ▾
Jie Feng, Sha-sha Li, Hao Luo, Qiu-ping Wei, Bing Wang, Jian-guo Li, Dong-ping Hu, Jun Mei, Zhi-ming Yu. Preparation and characterization of ultrananocrystalline diamond films in H2/Ar/CH4 gas mixtures system with novel filament structure. Journal of Central South University, 2015, 22(11): 4097-4104 DOI:10.1007/s11771-015-2955-2

登录浏览全文

4963

注册一个新账户 忘记密码

References

[1]

CorriganT D, GruenD M, KraussA R, ZapolP, ChangR P H. The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond [J]. Diamond Related Materials, 2002, 11(1): 43-48

[2]

SumantA V, AucielloO, LiaoM. MEMS/NEMS based on mono-, nano-, and ultrananocrystalline diamond films [J]. Mrs Bulletin, 2014, 39(6): 511-516

[3]

SumantA V, AucielloO, CarpickR W. Ultrananocrystalline and nanocrystalline diamond thin films for MEMS/NEMS applications [J]. Mrs Bulletin, 2010, 35(4): 281-288

[4]

AucielloO, SumantA V. Status review of the science and technology of ultrananocrystalline diamond (UNCD™) films and application to multifunctional devices [J]. Diamond Related Materials, 2010, 19: 699-718

[5]

KraussA R, AucielloO, GruenD M, JayatissaA, SumantA, TucekJ, ManciniD C, MoldovanN, ErdemirA, ErsoyD, GardosM N, BusmannH G, MeyerE M, DingM Q. Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices [J]. Diamond Related Materials, 2001, 10: 1952-1961

[6]

MichalasL, SaadaS, KoutsoureliM. Reliability of nanocrystalline diamond MEMS capacitive switches [C]// 8th European Microwave Integrated Circuits Conference (Eumic). Nuremberg, Germany: IEEE, 2013364-367

[7]

GruenD M. Nanocrystalline diamond films [J]. Annual Review of Materials Science, 1999, 29: 211-259

[8]

MayP W, SmithJ A, MankelevichY A. Deposition of NCD films using hot filament CVD and Ar/CH4/H2 gas mixtures [J]. Diamond Related Materials, 2006, 15(2/3): 345-352

[9]

HuangS M, HongF C N. Low temperature growths of nanocrystalline diamond films by plasma-assisted hot filament chemical vapor deposition [J]. Surface and Coatings Technology, 2006, 200(10): 3160-3165

[10]

WangT, XinH W, ZhangZ M, DaiY B, ShenH S. The fabrication of nanocrystalline diamond films using hot filament CVD [J]. Diamond Related Materials, 2004, 13: 6-13

[11]

ZouY S, LiZ X, WuY F. Deposition and characterization of smooth ultra-nanocrystalline diamond film in CH4/H2/Ar by microwave plasma chemical vapor deposition [J]. Vacuum, 2010, 84: 1347-1352

[12]

VaminV P, LaptevV A, RalvchenkoV G. The state of the art in the growth of diamond crystals and films [J]. Inorganic Materials, 2006, 42: S1-S18

[13]

LiaoM Y, MengX M, ZhouX T, HuJ Q, WangZ G. Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si [J]. Journal of Crystal Growth, 2002, 236: 85-89

[14]

SunB-w, ZhagnX-p, LinZ-da. Growth mechanism and the order of appearance of diamond (111) and (100) facets [J]. Physical Review B, 1993, 47(15): 9816-9824

[15]

SankaranK J, PandaK, SundaravelB. Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing [J]. Journal of Applied Physics, 2014, 115(6): 063701

[16]

CebikJ, McdonoughJ K, PeerallyF. Raman spectroscopy study of the nanodiamond-to-carbon onion transformation [J]. Nanotechnology, 2013, 24(20): 205703

[17]

FerrariA C, RobertsonJ. Interpretation of Raman spectra of disordered and amorphous carbon [J]. Physical Review B, 2000, 61: 14095

[18]

NemanichR, GlassJ, LucovskyG, ShroderR. Raman scattering characterization of carbon bonding in diamond and diamondlike thin films [J]. Journal of Vacuum Science & Technology A, 1988, 6: 1783-1787

[19]

ChenS T, ChuY C, LiuC Y. Surface-enhanced Raman spectroscopy for characterization of nanodiamond seeded substrates and ultrananocrystalline diamond at the early-stage of plasma CVD growth process [J]. Diamond and Related Materials, 2012, 24: 161-166

[20]

FerrariA C, RobertsonJ. Origin of the 1150-cm-1 Raman mode in nanocrystalline diamond [J]. Physical Review B, 2001, 63: 121405

[21]

CorriganT, GruenD, KraussA, ZapolP, ChangR. The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond [J]. Diamond Related Materals, 2002, 11: 43-48

[22]

LiangX-b, WangL, ZhuH-l, YangD-ren. Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2/Ar gas mixture [J]. Surface & Coating Technology, 2007, 202: 261-267

AI Summary AI Mindmap
PDF

90

Accesses

0

Citation

Detail

Sections
Recommended

AI思维导图

/