Design of 256 bit single-poly MTP memory based on BCD process

Abstract

We propose a single-poly MTP (multi-time programmable) cell consisting of one capacitor and two transistors based on MagnaChip’s BCD process. The area of a unit cell is 37.743 75 μm². The proposed single-poly MTP cell is erased and programmed by the FN tunnelling scheme. We design a 256 bit MTP memory for PMICs (power management ICs) using the proposed single-poly MTP cells. For small-area designs, we propose a selection circuit between V10V and V5V, and a WL (word-line) driver by simplifying its logic circuit. We reduce the total layout area by using pumped internal node voltages from a seven-stage cross-coupled charge pump for V10V (=10 V) and V5V (=5 V) without any additional charge pumps. The layout size of the designed 256 bit MTP memory is 618.250 μm × 437.425 μm.

Keywords

multi-time programmable memory / PMIC / cross-coupled charge pump

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