1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

Abstract

InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm²/V-s with sheet carrier densities larger than 4.6×10¹² cm⁻². Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/mm. Excellent depletion-mode operation, with a threshold voltage of −0.3 V and I_DSS of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10⁻⁸ Ω/cm², which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency (f_T) and the maximum oscillation frequency (f_max) are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.

Keywords

metamorphic device / mental organic chemical vapor deposition / high electron mobility transistors / InP substrate / InGaAs

References

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