Negative differential resistance behavior in doped C₈₂ molecular devices

Abstract

By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C₈₂, C₈₀BN and C₈₀N₂ were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential resistance (NDR) behavior can be observed in certain bias regions for C₈₂ and C₈₀BN molecular devices but cannot be observed for C₈₀N₂ molecular device. A mechanism for the negative differential resistance behavior was suggested.

Keywords

electronic transport properties / negative differential resistance / first-principle / molecular device

References

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