Improved direct power injection model of 16-bit microcontroller for electromagnetic immunity prediction

Abstract

To promote the modeling standardization process of the integrated circuits, an improved electrical simulation model for a direct power injection (DPI) setup which was used to measure the conducted immunity of a 16-bit microcontroller to radio frequency aggression was investigated. Based on the existing model of the same microcontroller, the PDN module was modified by adding the core, PLL and A/D network models, which could reflect the actual electric distribution situation within the microcontroller more accurately. By comparing the simulation results with the measurement results, the effectiveness of the modified model can be improved to 500 MHz, and its uncertainty is within ±1.8 dB (±2 dB is acceptable). Then, to improve the simulation accuracy of the complete model in the high frequency range, the I/O model which contained the dynamic and nonlinear characteristics reflecting the variation of the internal impedance of the microcontroller with increasing the frequency of the external noise was introduced. By comparing the simulation results with the measurement results, the effectiveness of the second modified model can be improved up to 1.4 GHz with the uncertainty of ±1.8 dB. Thus, a conclusion can be reached that the proposed model can be applied to a much wider frequency range with a smaller uncertainty than the latest model of the similar type. Furthermore, associated with the electromagnetic emission testing platform model, the PDN module can also be used to predict the electromagnetic conducted and radiated emission characteristics. This modeling method can also be applied to other integrated circuits, which is very helpful to the standardization of the IC electromagnetic compatibility (EMC) modeling process.

Keywords

electromagnetic immunity / microcontroller / direct power injection / passive distribution network

References

[1] SketoeJ. G.Integrated circuit electromagnetic immunity handbook [M], 2000, Seattle, NASA

[2] BendhiaS., RamdaniM., SicardE.Electromagnetic compatibility of integrated circuits—Techniques for low emission and immunity [M], 2006, New York, Springer: 1

[3] ICHIKAWA K. Simulation of integrated circuit immunity with LECCS model [C]// 17th International Zurich Symposium on Electromagnetic Compatibility. Singapore, 2006: 308–311.

[4] LenantJ. L., RamdaniM., PerdriauR., DrissiM.. EMC assessment at chip and PCB level: Use of the ICEM model for jitter analysis in an integrated PLL [J]. IEEE Trans on Electromagnetic Compatibility, 2007, 49: 182-191

[5] BOYER A, BENDHIA S, SICARD E. Modelling of a direct power injection aggression on a 16 bit microcontroller input buffer [C]// EMC Compo 07. Torino, 2007: 35–39.

[6] SU T, UNGAR M, STEINECK T, WEIGEL R. Dynamic, nonlinear and passive model of microcontroller for immunity simulation [C]// Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility. Singapore, 2008: 28–31.

[7] RamdaniM., SicardE., BoyerA., Ben DhiaS., WhalenJ. J., HubingT., CoenenM., WadaO.. The electromagnetic compatibility of integrated circuits—Past, present and future [J]. IEEE Trans on Electromagnetic Compatibility, 2009, 51: 78-100

[8] LabussièreC., BendhiaS., SicardE.. Modeling the electromagnetic emission of a microcontroller using a single model [J]. IEEE Trans on Electromagnetic Compatibility, 2008, 50: 22-34

[9] IEC 62132-4Integrated circuits-measurement of electromagnetic immunity, 150 KHz to 1 GHz: Part 4. Direct RF power injection method [S], 2004, Geneva, IEC

[10] SICARD E, BOYER A. Software: Ic-emc2.0 [EB]. [2010-07-22]. http://www.ic-emc.org

[11] Ousetech Ltd. Software: Winspice [EB]. [2010-07-22]. http://www.winspice.com

[12] SICARD E, BOYER A. IC-EMC v2.0 user’s manual [M]. INSA Toulouse, 2009: 90.

[13] LAMOUREUX E. Research on the susceptibility of digital integrates circuits with high frequency aggressions [C]// INSA. 2006: 132. (in French)

[14] MALONEY T J, KHURANA N. Transmission line pulsing techniques for circuit modeling of ESD phenomena [C]// EOS/ESD Symposium Proceedings. Minneapolis, MN, 1985: 49–54.

[15] LABUSSIÈRE C, SICARD E, LOCHOT C, BOUISSE G, TAO Jun-wu. Characterization and modeling of the supply network from an integrated circuit up to 12 GHz [C]// EMC Europe. Barcelona, 2006: 894–899.