1.0 V low voltage CMOS mixer based on voltage control load technique

Bao-lin Wei , Yu-jie Dai , Xiao-xing Zhang , Ying-jie Lü

Journal of Central South University ›› 2011, Vol. 18 ›› Issue (5) : 1572 -1578.

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Journal of Central South University ›› 2011, Vol. 18 ›› Issue (5) : 1572 -1578. DOI: 10.1007/s11771-011-0874-4
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1.0 V low voltage CMOS mixer based on voltage control load technique

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Abstract

CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 μm CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are: the conversion gain (GC) is 5.3 dB, the input-referred third-order intercept point (PIIP3) is 4.6 dBm, the input-referred 1 dB compression point (P1dB) is −7.4 dBm, and the single-sideband noise figure (NFSSB) is 21.7 dB.

Keywords

CMOS active mixer / voltage control load technique / low voltage

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Bao-lin Wei, Yu-jie Dai, Xiao-xing Zhang, Ying-jie Lü. 1.0 V low voltage CMOS mixer based on voltage control load technique. Journal of Central South University, 2011, 18(5): 1572-1578 DOI:10.1007/s11771-011-0874-4

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References

[1]

VahidforM. B., ShoaeiO.. A CMOS low voltage down-converter mixer for sub 1V applications [C]. IEEE Workshop on Microelectronics and Electron Devices, 2006, Boise, IEEE Press: 5-6

[2]

VidojkovicV., TangJ. V. D.. A low-voltage folded-switching mixer in 0.18-μm CMOS [J]. IEEE Journal of Solid-State Circuits, 2005, 40(6): 1259-1264

[3]

HsiehH. H., LuL. H.. Designed of ultra-low-voltage RF front ends with complementary current-reused architectures [J]. IEEE Transactions on Microwave Theory and Techniques, 2007, 55(7): 1145-1158

[4]

ChenC. H., ChiangP. Y., ChristinaF. J.. A low voltage mixer with improved noise figure [J]. IEEE Microwave and Wireless Components Letters, 2009, 19(2): 92-94

[5]

WengR. M., WangJ. C., WeiH. C.. A 1V 2.4 GHz down conversion folded mixer [C]. IEEE Asia Pacific Conference on Circuits and Systems, 2006, Singapore, IEEE Press: 1450-1452

[6]

KlumperinkE. A. M., LouwsmaS. M., WienkG. J. M., NautaB.. A CMOS switched transconductor mixer [J]. IEEE Journal of Solid-State Circuits, 2004, 39(8): 1231-1240

[7]

HuangM. F., KuoC. J., LeeS. Y.. A 5.25-GHz CMOS folded-cascode even-harmonic mixer for low-voltage applications [J]. IEEE Transactions of Microwave Theory and Techniques, 2006, 54(2): 660-669

[8]

RAZAVI B. Design of analog CMOS integrated circuits [M]. New York: McGraw-Hill, 2001: 20–332.

[9]

DarabiH., ChiuJ.. A noise cancellation technique in active RF-CMOS mixers [J]. IEEE Journal of Solid-State Circuits, 2005, 40(12): 2628-2632

[10]

LeungB.VLSI for wireless communication [M], 2002, New Jersey, Prentice Hall: 151-165

[11]

LiuL., WangZ.-hua.. Analysis and design of a low-voltage RF CMOS mixer [J]. IEEE Transactions on Circuits and Systems-II: Express Briefs, 2006, 53(3): 212-216

[12]

TerrovitisM. T., MeyerR. G.. Noise in current-commutating CMOS mixers [J]. IEEE Journal of Solid-State Circuits, 2006, 54(7): 2917-2924

[13]

TerrovitisM. T.. Intermodulation distortion in current commutating CMOS mixers [J]. IEEE Journal of Solid-State Circuits, 2000, 35(10): 1461-1473

[14]

SoorapanthT., LeeT. H.. RF linearity of short-channel MOSFET’s [C]. 1st International Workshop on Design Mixed-Mode Integrate Circuits Application, 1997, Mexico, IEEE press: 81-84

[15]

NguyenT. K., KrizhanovskiiV.. A low-power RF direct-conversion receiver/transmitter for 2.4-GHz-band IEEE802.15.4 standard in 0.18-μm CMOS technology [J]. IEEE Transactions of Microwave Theory and Techniques, 2006, 54(12): 4062-4071

[16]

RotellaF., BhattacharyaB. K., BlaschkeV., MatloubianM., BrotmanA., ChengY., DivechaR., HowardD., LampaertK., MiliozziP., RacanelliM., SinghP., ZampardiP. J.. A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design [J]. IEEE Transactions on Electronic Devices, 2005, 52(7): 1429-1441

[17]

CheungT. S., LongJ.. Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits [J]. IEEE Journal of Solid-state Circuits, 2006, 41(5): 1183-1200

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