Synthesis and characterization of bismuth-doped tin dioxide nanometer powders

Qiu-xing He , Wei-ping Tu , Jian-qing Hu

Journal of Central South University ›› 2006, Vol. 13 ›› Issue (5) : 519 -524.

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Journal of Central South University ›› 2006, Vol. 13 ›› Issue (5) : 519 -524. DOI: 10.1007/s11771-006-0080-y
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Synthesis and characterization of bismuth-doped tin dioxide nanometer powders

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Abstract

Bismuth-doped tin dioxide nanometer powders were prepared by co-precipitation method using SnCl4 and Bi(NO3)3 as raw materials. The effects of calcining temperature and doping ratio on the particle size, composition, spectrum selectivity of bismuth-doped tin dioxide and the phase transition of Bi-Sn precursor at different temperatures were studied by means of X-ray diffraction, transmission electron microscopy, ultraviolet-visual-near infrared diffuse reflection spectrum and the thermogravimetric-differential scanning calorimetry. The results show that prepared bismuth-doped tin dioxide powders have excellent characteristics with a single-phase tetragonal structure, good dispersibility, good absorbency for ultraviolet ray and average particle size less than 10 nm. The optimum conditions for preparing bismuth-doped tin dioxide nanometer powders are as follows: calcining temperature of 600 °C, ratio of bismuth-doped in a range of 0.10–0.30, and Bi-Sn precursor being dispersed by ultrasonic wave and refluxed azeotropic and distillated with mixture of n-butanol and benzene. The mechanism of phase transition of Bi-Sn precursor is that Bi3+ enters Sn-vacancy and then forms Sn-O-Bi bond.

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bismuth-doped tin dioxide / tin dioxide nanometer powders / co-precipitation method / ultrasonic wave

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Qiu-xing He, Wei-ping Tu, Jian-qing Hu. Synthesis and characterization of bismuth-doped tin dioxide nanometer powders. Journal of Central South University, 2006, 13(5): 519-524 DOI:10.1007/s11771-006-0080-y

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References

[1]

GorleyP M, KhomyakV V, BilichukS V, et al.. SnO2 films: formation, electrical and optical properties [J]. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2005, 118(1–3): 160-163

[2]

CalestaniD, ZappettiniA, LazzariniL. Structural and optical study of SnO2 nanobelts and nanowires [J]. Materials Science and Engineering C, 2005, 25(5–8): 625-630

[3]

HeQiu-xing, TuWei-ping, HuJian-qing. Advances in development of the spectrum selective nanocomposite coatings[J]. Materials Review, 2005, 19(12): 9-12(in Chinese)

[4]

HeQiu-xing, TuWei-ping, HuJian-qing. Developments of modification and dispersion of nanometer Powders in nanocomposite coatings[J]. Chemical Industry and Engineering Progress, 2005, 14(10): 1108-1112(in Chinese)

[5]

WangYuan-sheng, YangYu-min, Huangzhao-xin. Doping and microstructure of nanocrystalline SnO2 [J]. Chinese Journal of Materials Research, 1998, 12(5): 531-534(in Chinese)

[6]

LeiteE R, LongoE, VarelaJ A, et al.. A new method to control participle size distribution of SnO2 nanoparticles for gas sensor applications[J]. Advanced Materials, 2000, 12(13): 965-965

[7]

AukkaravittayapunS, WongtidaN, KasecwatinT, et al.. Large scale F-doped SnO2 coating on glass by spray pyrolysis[J]. Thin Solid Films, 2006, 496(1): 117-120

[8]

HanJ B, ZhouH J, WangQ Q. Conductivity and optical nonlinearity of Sb doped SnO2 films[J]. Materials Letters, 2006, 60(2): 252-254

[9]

LiWei, ZhouKe-chao, YangHua. Application research progress of bismuth oxide[J]. Journal of Materials Science and Engineering, 2004, 22(1): 154-156 in Chinese)

[10]

MalinovskayaT D, AparnevA I. Carbon monoxide semiconductor based on SnO2-Bi2O3 [J]. Russian Journal of Applied Chemistry, 2001, 74(11): 1864-1867

[11]

Rose-NoelleV, EdouardC. Oxide ion transport in bismuth-based materials[J]. Materials Research Society Symposium Proceedings, 2003, 756: 95-103

[12]

KikuchiK, TairaK. Highly nonlinear bismuth oxide-based glass fibers for all-optical signal processing[J]. Electronics Letters, 2002, 38(4): 166-167

[13]

WangBin-huaOptical properties of nano-semiconductor-materials and their applications[D], 2003, Chengdu, Department of Metal Materials, Sichuan University(in Chinese)

[14]

LuWan-zhen, YuanHong-fu, XuGuang-tong, et al.Modern analytical technology of near infrared spectrum[M], 2000, Beijing, China Petrolchemical Press(in Chinese)

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