Design and preparation of a high immunity piezoresistive pressure sensor

Abstract

To eliminate the complex interference encountered by pressure sensors in practical applications, we designed and fabricated a piezoresistive pressure sensor featuring wide-temperature-range adaptability to harsh environments and high anti-interference characteristics. A circuit integrating conditioning compensation function with signal conversion function was proposed to compensate and convert pressure signals, and an integrated encapsulated housing was designed and fabricated to connect the pressure sensor chip with the PCB circuit for real-time processing of pressure signals. Its anti-interference performance was primarily reflected in reducing interference to the sensor caused by environmental temperature, voltage noise, and long-distance transmission. The thermal zero drift of the pressure sensor was reduced by 88.95%, and thermal sensitivity drift by 76.17% across the temperature range from -40 ℃ to 105 ℃. When subjected to voltage noise, the signal fluctuation was reduced by 99.7% after circuit processing. When subjected to long-distance transmission, the signal degradation after circuit processing was reduced by 89.9%. The results show that the sensor’s anti-interference performance in complex real-world applications has been enhanced, resulting in more reliable output of the sensor.

Keywords

micro-electro-mechanical systems (MEMS) / silicon-on-insulator(SOI) / pressure sensor / anti-interference / compensation circuit

Acknowledgement

This work was supported by National Key Research and Development Program of China (No.2023YFB3209100). Additionally, gratitude goes to colleagues who provided technical assistance, and to participants who supported data collection.

Declaration of conflicting interests

The authors have no conflict of interests related to this publication.

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