Effect of Substrate Temperature on Preparation of SiO ₂-like Thin Films by Plasma Jet

Abstract

This study explores the effects of the substrate temperature (25-200 ℃) on SiO₂-like thin films prepared via atmospheric-pressure plasma jet. Films deposited at elevated temperatures exhibited a reduced thickness (from 242 to 156 nm) but enhanced mechanical and chemical performance. The pencil hardness improved from grade B to 4H. The adhesion reached class 0 (no detachment) at temperatures of 100 ℃ and above. X-ray photoelectron spectroscopy (XPS) confirmed carbon reduction and silicon dioxide (SiO₂) enrichment when the substrate temperature increased from 25 to 200 ℃, indicating intensified precursor decomposition. Hydrochloric acid corrosion testing (3.0 h immersion) revealed that the films deposited at 200 ℃ exhibited improved corrosion resistance, with a mass loss of 6.53% compared to 7.01% for the bare substrates. The results indicate that the substrate temperature is a critical process parameter for preparing protective films applied in corrosive environments.

Keywords

atmospheric-pressure plasma jet / discharge / thin film / substrate temperature / corrosion resistance / SiO ₂

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