Enhanced Reliability and Stability of Vanadium Oxide-Based RRAM by Constructing VO_x / TiO₂ / n⁺⁺ Si p-i-n Structure

Abstract

Vanadium oxide(VO_x) has garnered significant attention in the realm of resistive random-access memory(RRAM) owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named Cu/VO_x/TiO₂/n⁺⁺Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(> 10²) and long-term stability.The tremendous improvement in the stability of the Cu/VO_x/TiO₂/n⁺⁺Si device compared with the Cu/VO_x/n⁺⁺Si device is due to the p-i-n structure of VO_x/TiO₂/n⁺⁺Si.The switching mechanism of the Cu/VO_x/TiO₂/n⁺⁺Si device is attributed to the growth and annihilation of Cu conductive filaments.

Keywords

vanadium oxide / bipolar resistive switching / p-i-n junction / resistive random-access memory(RRAM) / titanium dioxide / double-layer structure

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Funding

National Natural Science Foundation of China(61376017)