Topic:Deep Space Environment Exploration

Simulation of the Interaction's Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices

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  • 1. National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;
    2. Shanghai Institute of Spaceflight Control Technology, Shanghai 201109, China;
    3. University of Chinese Academy of Sciences, Beijing 100049, China;
    4. Beijing University of Technology, Beijing 100022, China

Received date: 06 Nov 2018

Revised date: 26 Mar 2019

Abstract

By simplifying the sensitive volume of semiconductor devices,a typical Geometric Model of CMOS device is has been built. The recoiled nuclei,average energy and LET induced by Cosmic High Energy Protons and High Energy alpha particles in the sensitive units are simulated. The effects of heavy metals within the devices' metal interconnect overlayers on the LET of Single Event Effect were studied,and the result shows that effects of high energy particles on the tungsten in the metal wiring layers can increase LET of secondary particles,and thus heighten the incidence of single event upset.

Cite this article

YANG Tao, SHAO Zhijie, CAI Minghui, JIA Xinyu, HAN Jianwei . Simulation of the Interaction's Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices[J]. Journal of Deep Space Exploration, 2019 , 6(2) : 173 -178 . DOI: 10.15982/j.issn.2095-7777.2019.02.009

References

[1] NEILL P M,BADHWAR G D,CULPEPPER W X,et al. Inter nuclear cascade-evaporation model for LET spectra of 200 MeV protons used for parts testing[J]. IEEE Transactions on Nuclear Science,1998,45(6):2467-2473.
[2] CELLERE G,PACCAGNELLA A,VISCONTI A,et al. Direct evidence of secondary recoiled nuclei from high energy protons[J]. IEEE Transactions on Nuclear Science,2008,55(6):2903-2908.
[3] 贺朝会,陈晓华,李国政. 高能质子单粒子翻转效应的模拟计算[J]. 计算物理,2002,19(4):367-370. HE C H,CHEN X H,LI G Z. Simulation calculation of single event upset effects for high energy protons[J]. Chinese Journal of Computational Physics,2002,19(4):367-370.
[4] 王同权,张若棋,沈永平,等. 高能离子在材料中输运的蒙特卡罗模拟[J]. 国防科技大学学报,2001,23(1):105-108. WANG T Q,ZHANG R Q,SHEN Y P,et al. The Monte Carlo simulation of the high energy ions transport in materials[J]. Journal of National University of Defense Technology,2001,23(1):105-108.
[5] 赵雯,郭晓强,陈伟,等. 质子与金属布线层核反应对微纳级静态随机存储器单粒子效应的影响分析[J]. 物理学报,2015,64(17):178501-1-178501-7. ZHAO W,GUO X Q,CHEN W,et al. Effects of nuclear reactions between protons and metal interconnect overlayers on single event effects of micro/nano scaled static random access memory[J]. Acta Physica Sinica,2015,64(17):178501-1-178501-7.
[6] 王同权,张文勇. 高能质子核反应截面的Monte Carlo计算[J]. 清华大学学报,2007,47(z1):1072-1075. WANG T Q,ZHANG W Y. Monte Carlo simulations of nuclear reactions induced by high energy protons[J]. Journal of Tsinghua University(Science and Technology),2007,47(z1):1072-1075.
[7] PAUL E D. Physics-based simulation of single-event effects[J]. IEEE Transactions on Nuclear Science,2005,5(3):343-357.
[8] 樊胜,于洪伟,申庆彪,等. 与散裂中子靶物理相关的理论计算程序探讨Ⅱ厚靶计算[J]. 原子核物理评论,2002,19(4):390-394. FAN S,YU H W,SHEN Q B,et al. Theoretic programs related to spallation neutron source for ADSⅡ thick target simulations[J]. Nuclear Physics Review,2002,19(4):390-394.
[9] 杨涛,李家才,唐兴华,等. BEPCⅡ-LINAC试验束次级粒子的模拟分析及质子能谱测量[J]. 核技术,2011,34(4):1024-1030. YANG T,LI J C,TANG X H,et al. Simulation of secondary particles and measurement of the proton spectrum on BEPCⅡ-LINAC[J]. Nuclear Techniques,2011,34(4):1024-1030.
[10] SCOTT R M,EDWARD A B,MICHAEL A X,et al. The simulation of damage tracks in silicon[J]. IEEE Transactions on Nuclear Science,2004,51(5):2846-2850.
[11] REED R A,LAUENSTEIN J M,SCHRIMPF R D,et al. Impact of ion energy and spices on single event effects analysis[J]. IEEE Transactions on Nuclear Science,2007,54(6):2312-2321.
[12] MICHAEL A C,VISHWA R,ROBERT A W,et al. The effect of high-Z materials on proton-induced charge collection[J]. IEEE Transactions on Nuclear Science,2010,57(6):3212-3218.
[13] MICHAEL A C,KEVIN M W,ROBERT A W,et al. The effects of neutron energy and high-Z materials on single event upsets and multiple cell upsets[J]. IEEE Transactions on Nuclear Science,2011, 58(6):2591-2598.
[14] MICHAEL A C,ROBERT A W,RONALD D S. The effects of nuclear fragmentation models on single event effect prediction[J]. IEEE Transactions on Nuclear Science,2009,58(6):3158-3164.
[15] DODD P E,SHANEYFELT M R,PAILLET P. Tungsten-filled silicone composites for moderating proton radiation effects in electronics[J]. IEEE Transactions on Nuclear Science,2007(7):1700-1704.
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