Simulation of the Interaction's Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices

Abstract

By simplifying the sensitive volume of semiconductor devices,a typical Geometric Model of CMOS device is has been built. The recoiled nuclei,average energy and LET induced by Cosmic High Energy Protons and High Energy alpha particles in the sensitive units are simulated. The effects of heavy metals within the devices' metal interconnect overlayers on the LET of Single Event Effect were studied,and the result shows that effects of high energy particles on the tungsten in the metal wiring layers can increase LET of secondary particles,and thus heighten the incidence of single event upset.

Keywords

high-energy particles / CMOS technique device / LET / SEE / GEANT4

References

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