Simulation of the Interaction's Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices

YANG Tao; SHAO Zhijie; CAI Minghui; JIA Xinyu; HAN Jianwei

doi:10.15982/j.issn.2095-7777.2019.02.009

Journal of Deep Space Exploration ›› 2019, Vol. 6 ›› Issue (2) :173 -178. DOI: 10.15982/j.issn.2095-7777.2019.02.009

Topic：Deep Space Environment Exploration

Simulation of the Interaction's Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices

YANG Tao¹, SHAO Zhijie², CAI Minghui^1,3, JIA Xinyu^1,4, HAN Jianwei^1,3

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Abstract

By simplifying the sensitive volume of semiconductor devices,a typical Geometric Model of CMOS device is has been built. The recoiled nuclei,average energy and LET induced by Cosmic High Energy Protons and High Energy alpha particles in the sensitive units are simulated. The effects of heavy metals within the devices' metal interconnect overlayers on the LET of Single Event Effect were studied,and the result shows that effects of high energy particles on the tungsten in the metal wiring layers can increase LET of secondary particles,and thus heighten the incidence of single event upset.

Keywords

high-energy particles / CMOS technique device / LET / SEE / GEANT4

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YANG Tao, SHAO Zhijie, CAI Minghui, JIA Xinyu, HAN Jianwei. Simulation of the Interaction's Effects on Single Event Effects between High-Energy Particles and Interconnect Overlayers within Semiconductor Devices. Journal of Deep Space Exploration, 2019, 6(2): 173-178 DOI:10.15982/j.issn.2095-7777.2019.02.009