Research Progress for Single Event Effects of Space Payloads by Pulsed Laser Simulation

HAN Jianwei1, SHANGGUAN Shipeng1,2, MA Yingqi1, ZHU Xiang1,2, CHEN Rui1, LI Sai1,2

PDF(1974 KB)
PDF(1974 KB)
Journal of Deep Space Exploration ›› 2017, Vol. 4 ›› Issue (6) : 577-584. DOI: 10.15982/j.issn.2095-7777.2017.12.012

Research Progress for Single Event Effects of Space Payloads by Pulsed Laser Simulation

  • HAN Jianwei1, SHANGGUAN Shipeng1,2, MA Yingqi1, ZHU Xiang1,2, CHEN Rui1, LI Sai1,2
Author information +
History +

Abstract

Pulsed laser is a new method which can be used to simulate single event effects(SEE)of space exploration payloads. It can locate the most SEE sensitive area of the test devices,and also can dynamically test SEE time response of the circuit system. With test and theory research,the relationship between laser threshold energy of single event upset and single event latch-up with heavy ion linear energy transition(LET)is established. And the laser quantification is obtained through the evaluation of SEE sensitivity of space exploration payloads. It’s of great significance for establishing standards of the pulsed laser evaluation and test,and for providing references for further engineering application. The SEE sensitivity and its effects on the circuit system are required to be tested,and suitable circuits are to be designed to avoid SEE. The method for avoiding SEE of the experimental circuit system should be tested,and special ASIC radiation hard circuit should be designed for the space payloads. All mentioned above need fine SEE tests.

Keywords

space exploration payloads / single event effects / pulsed laser / evaluation / sensitive area orientation / dynamic testing

Cite this article

Download citation ▾
HAN Jianwei, SHANGGUAN Shipeng, MA Yingqi, ZHU Xiang, CHEN Rui, LI Sai. Research Progress for Single Event Effects of Space Payloads by Pulsed Laser Simulation. Journal of Deep Space Exploration, 2017, 4(6): 577‒584 https://doi.org/10.15982/j.issn.2095-7777.2017.12.012

References

[1] 韩建伟,张振龙,封国强,等. 单粒子锁定极端敏感器件的试验及对我国航天安全的警示[J]. 航天器环境工程,2008,25(3):265-267
HAN J W,ZHANG Z L,FENG G Q,et al. Experiment of single particle locking extremely sensitive device and warning of space safety in China[J]. Spacecraft Environment Engineering,2008,25(3):265-267
[2] THOMAS E,JOSEPH M. Extreme latchup susceptibility in modern commercial-off-the-shelf(COTS)monolithic 1M and 4M CMOS static random access memory(SRAM)devices [C]//Radiation Effects Data Workshop of IEEE. [S.l]:IEEE,2005.
[3] FOUILLAT P,POUGET V,MCMORROW D,et al. Fundamentals of the pulsed laser technique for single-event upset testing[J]. Radiation Effects on Embedded Systems,Springer,2007:121-141
[4] JONES R,CHUGG A M,JONES C M S,et al. Comparison between SRAM see cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility[J]. IEEE Transactions on Nuclear Science,2000,47(3):539-544
[5] POUGET V,FOUILLAT P,LEWIS D,et al. Laser cross measurement for the evaluation of single event effects in integrated circuits[J]. Microelectronics Reliability,2000,40(2):1371-1375
[6] DODDS N A,HOOTEN N C,REED R A,et al. SEL-sensitive area mapping and the effects of reflection and diffraction from metal lines on laser SEE testing[J]. IEEE Transactions on Nuclear Science,2013,60(4):2550-2558
[7] YU Y T,HAN J W,FENG G Q,et al. Correction of single event latchup rate prediction using pulsed laser sensitivity mapping test[J]. IEEE Transactions on Nuclear Science,2015,62(2):565-570
[8] YU Y T, FENG G Q,CHEN R,et al. Laser SEU sensitivity mapping of submicron CMOS SRAM[J]. Journal of Semiconductors,2014,35(6):1-4
[9] 余永涛,封国强,陈睿,等. CMOS SRAM器件单粒子锁定敏感区的脉冲激光定位试验研究[J]. 航天器环境工程,2014,31(2):150-153
YU Y T,FENG G Q,CHEN R,et al. Research of SEL sensitive region of CMOS SRAM by pulsed laser mapping facility[J]. Spacecraft Environment Engineering,2014,31(2):150-153
[10] BUCHNER S P,FLORENT M,POUGET V,et al. Pulsed-laser testing for single-event effects investigations[J]. Journal of Applied Physics,2013,84(2):690-703
[11] POUGET V,DOUIN A,FOUCARD G,et al. Dynamic testing of an SRAM-based FPGA by time-resolved laser fault injection[C]//14th IEEE International on-line Testing Symposium(IOLTS 2008). Rhodes,Greece:IEEE,2008:295-301.
[12] POUGET V,LEWIS D,FOUILLAT P. Time-resolved scanning of integrated circuits with a pulsed laser:application to transient fault injection in an ADC[J]. IEEE Transactions on Instrumentation and Measurement,2004,53(4):1227-1231
[13] DARRACQ F,LAPUYADE H,BUARD N,et al. Backside SEU laser testing for commercial-off-the-shelf SRAMs[J]. IEEE Transactions on Nuclear Science,2002,49(6):2977-2983
[14] MELINGER J,BUCHNER S,MCMORROW D,et al. Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies[J]. IEEE Transactions on Nuclear Science,1994,41(6):2575-2584
[15] 黄建国,韩建伟. 脉冲激光诱发单粒子效应的机理[J]. 中国科学G辑物理学力学天文学,2004,34(2):121-130
HUANG J G,HAN J W. Mechanism of pulsed laser induced single particle effect[J]. Science In China Series G,2004,34(2):121-130
[16] 封国强,马英起,张振龙,等. 光电耦合器的单粒子瞬态脉冲效应研究[J]. 原子能科学技术,2008,42(增刊):36-42
FENG G Q,MA Y Q,ZHANG Z L,et al. Study of single event transients effect for opto coupler[J]. Atomic Energy Science and Technology,2008,42(S):36-42
[17] 田恺,曹洲,薛玉雄,等. 器件表面钝化层对脉冲激光等效重离子LET值的影响[J]. 真空与低温,2007,13(2):102-106
TIAN K,CAO Z,XUE Y X,et al. Impact of device surface covered by a passivation layer on pulsed laser-equivalent heavy ion let value[J]. Vacuum&Cryogenics,2007,13(2):102-106
[18] 黄建国,韩建伟. 脉冲激光模拟单粒子效应的等效LET计算[J]. 中国科学G辑,2004,34(6):601-609
HUANG J G,HAN J W. Equivalent LET calculation of pulsed laser simulation of single event effects[J]. Science In China Series G,2004,34(6):601-609
[19] 田恺,曹洲,薛玉雄,等. 脉冲激光能量等效重离子LET研究[J]. 原子能科学技术,2010,44(4):489-493
TIAN K,CAO Z,XUE Y X,et al. Equivalent heavy-iron linear energy transfer of pulsed laser energy[J]. Atomic Energy Science and Technology,2010,44(4):489-493
[20] 颜洪雷,黄庚华,王海伟,等. TDC-GP1器件单粒子锁定效应的脉冲激光模拟试验研究[J]. 航天器环境工程,2014,31(2):146-149
YAN H L,HUANG G H,WANG H W,et al. Study of single event latch-up effect of TDC-GP1 by pulsed laser simulation test[J]. Space Environment Engineer,2014,31(2):146-149
PDF(1974 KB)

Accesses

Citations

Detail

Sections
Recommended

/