Electrical and Thermal Performance of SiC Wide-Bandgap Power Devices: Influence of Package Configuration

Byongjin Kim , Chandong Kim , Byoungok Lee , Alexander Bolotnikov

Intell. Sustain. Manuf. ›› 2026, Vol. 3 ›› Issue (1) : 10008

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Intell. Sustain. Manuf. ›› 2026, Vol. 3 ›› Issue (1) :10008 DOI: 10.70322/ism.2026.10008
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Electrical and Thermal Performance of SiC Wide-Bandgap Power Devices: Influence of Package Configuration
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Abstract

Wide Bandgap (WBG) semiconductors, particularly Silicon Carbide (SiC), have become pivotal in advancing high-efficiency, high-power-density systems. Cascode configurations, combining a high-voltage SiC JFET with a low-voltage Si MOSFET, enable Normally-OFF operation while leveraging SiC’s superior switching and thermal properties. However, co-packaging these devices introduces critical design challenges related to parasitic inductance, thermal management, and reliability. This study investigates the impact of bonding configuration and die-attach material selection on dynamic and thermal performance in SiC-based modules. Double Pulse Test (DPT) results reveal that direct bonding provides a better tradeoff between switching losses and dynamic operation stability, mitigating VDS overshoot, gate oscillation, and EMI risk, thereby improving switching stability under system-level stress. Conversely, indirect bonding increases inductance, amplifying oscillations and dynamic stress during turn-off events. Thermal analysis demonstrates that while system-level cooling dominates Rthja, the adoption of sintered silver (Ag) as a die-attach material achieves ~20% reduction in Rthjc, lowering junction temperatures and enhancing reliability for high-power applications. These findings underscore the importance of interconnect design and attach material optimization in achieving robust, high-efficiency operation of wide-bandgap devices.

Keywords

SiC / JFET / Cascode / Double Pulse Test (DPT) / Bonding topology / Interconnect / Die attach / Pressure-less sintered silver / RthJC / Thermal resistance / Wide-bandgap (WBG) devices / Power modules

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Byongjin Kim, Chandong Kim, Byoungok Lee, Alexander Bolotnikov. Electrical and Thermal Performance of SiC Wide-Bandgap Power Devices: Influence of Package Configuration. Intell. Sustain. Manuf., 2026, 3 (1) : 10008 DOI:10.70322/ism.2026.10008

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Statement of the Use of Generative AI and AI-Assisted Technologies in the Writing Process

During the preparation of this manuscript, the authors used [M/S Copilot] in order to [refine the sentence overall]. After using this service, the authors reviewed and edited the content as needed and take full responsibility for the content of the published article.

Author Contributions

Conceptualization, B.K.; Methodology, B.K., C.K. and B.L.; Validation, B.K., C.K., B.L. and A.B.; Formal Analysis, C.K. and B.L.; Investigation, B.K., C.K., B.L. and A.B.; Writing-Original Draft Preparation, B.K.; Writing-Review & Editing, B.K., C.K., B.L. and A.B.; Visualization, B.K.; Supervision, B.K. and A.B.; Project Administration, B.K. and A.B.

Ethics Statement

Not applicable.

Informed Consent Statement

Not applicable.

Data Availability Statement

The data supporting the findings of this study are available upon reasonable request.

Funding

This research received no external funding.

Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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