Polarization is one of the most fundamental properties of light. Traditional polarization-sensitive photodetectors, however, are limited in their ability to fully extract this information, as they translate the two orthogonal polarization states into currents of the same polarity. In this work, we unveil a new mechanism that could switch the photocurrent direction based on the polarization of the incident light. By leveraging the fact that shift current is not constrained by the built-in electric field of the heterojunction, we engineer the dynamic cancellation between shift and drift currents under specific photon energy and polarization conditions, leading to a reversible switch in photocurrent polarity. This approach leads to a reversible change in photocurrent polarity, allowing the anisotropic ratio of the detector to exceed the conventional limit. Additionally, the detector can automatically assign opposite currents to orthogonal linear polarization states, effectively mapping polarization into a ternary state. This enhancement significantly increases the information density, making it particularly advantageous for applications such as optical computing and optical communications.

Domain-induced carrier scattering and persistent photoconductivity (PPC) remain major bottlenecks in β-Ga₂O₃-based deep-ultraviolet (DUV) photodetectors, limiting their use in high-speed imaging, optical communication, and neuromorphic sensing systems. Here, we propose a materials–circuits co-design strategy that integrates crystallographic domain engineering with pulsed-gate modulation to overcome these challenges. Si-doped β-Ga₂O₃ thin films were epitaxially grown on 6° off-axis sapphire substrates, where atomic step edges induced single-domain alignment, resulting in improved lateral carrier transport and reduced leakage current compared with on-axis counterparts. Under comparable pulsed conditions, single-domain devices exhibited faster recovery than previously reported β-Ga₂O₃ phototransistors, highlighting the synergistic interplay between domain-engineered transport and dynamic gating. As a result, the devices achieved a high detectivity (D*) of 9.17 × 10¹⁵ Jones and a fast photoresponse of 0.7 ms under reset conditions, while maintaining stable and energy-efficient operation under sub-volt bias. Beyond individual devices, the optimized phototransistors were integrated into a 24 × 24 active-pixel array for system-level DUV imaging. Coupled with convolutional neural networks (CNNs), the array achieved accurate pattern recognition and image reconstruction, while synaptic depression and active reset processes enabled rapid afterimage suppression and image recovery. Overall, this work establishes a domain-engineered, pulse-modulated β-Ga₂O₃ phototransistor platform that unifies materials-, device-, and system-level innovations, providing a scalable and energy-efficient route toward intelligent ultraviolet vision.

Molybdenum disulfide (MoS₂) is regarded as a promising next-generation semiconductor material for high-end microelectronic chips due to its excellent properties. However, due to the atomic thickness of two-dimensional materials (2DMs), the interactions between these materials and their supporting substrates cannot be ignored, which affects the intrinsic properties of 2DMs. In this work, we investigated the influence of the substrate on the performance of MoS₂ devices. As compared to supported MoS₂ field-effect transistors (FETs), the suspended MoS₂ FET exhibits more intrinsic properties of a threshold voltage (V_th) shift toward 0 V and the current on/off ratio increases by 3 orders of magnitude. Moreover, by varying the trench/channel ratio in the MoS₂ FETs, we can effectively modulate the electrical performance of MoS₂. An increase in the trench/channel ratio results in a shift of the V_th from −40 to −5 V, approaching the ideal value. Concurrently, the subthreshold swing is reduced by approximately an order of magnitude to ~200 mV dec^–1 (from ~3600 mV/dec), and the mobility is enhanced from ~1 to 100 cm² V⁻¹ s⁻¹. To mitigate the effects of contact resistance and other extrinsic factors, we fabricated a suspended Hall-bar MoS₂ device, achieving a mobility of 96.8 cm² V⁻¹ s⁻¹, more than double the 37.0 cm² V⁻¹ s⁻¹ measured in a supported device. This work demonstrates a practical approach for enhancing the properties of 2D semiconductor devices, facilitating the development of high-performance electronics.

Neuromorphic sensing technology is rapidly evolving from laboratory demonstrations to application-driven prototypes such as multimodal wearables that integrate touch, vision, and chemistry, synaptic devices operating under aqueous, low-voltage conditions, and skin-like arrays capable of on-site learning. Organic materials have emerged as promising candidates for these technologies owing to their softness, biocompatibility, and intrinsic ionic–electronic coupling that emulates synaptic signaling. Despite accelerating progress in wearables and human–machine interfaces, this field still lacks an integrated, application-oriented overview of organic neuromorphic systems. This review addresses that gap by clarifying when to employ different device platforms and how electric signals are translated into chemical, physical, and visual sensing. We first discuss the characteristics of bioneural signals and how the devices can mimic them. We then compare device platforms, including two-terminal devices and three-terminal transistors, outlining their structures and operation mechanisms. Building on these foundations, we introduce various sensory applications across chemical detection, physical stimuli, and visual photoreception, including multimodal architectures that integrate heterogeneous inputs within a single adaptive system. The review concludes by summarizing the defining characteristics of organic neuromorphic devices and outlining the remaining challenges for future research.

The 21st century is marked by the emergence of “information warfare” and the proliferation of “intelligent machines”, driving the advancement of intelligent absorbing materials (IAMs). These materials with dynamic and tunable electromagnetic wave absorption (EMWA) performance overcome the limitations of conventional static absorbers, which have fixed EMWA performance. The IAMs represent a leading strategy for achieving adaptive stealth and superior control over the EM spectrum in contemporary warfare. This paper provides a comprehensive review of recent advances in IAMs that respond to external stimulus strategies such as temperature, voltage, mechanical deformation, lumped element, and multi-field coordination. These stimuli facilitate real-time modulation of EM parameters, enabling on-demand multiscopic EM energy attenuation through conductive loss, polarization loss, multiple reflections and scatterings, resonance effects, and optimized impedance matching, thereby achieving dynamically adjustable EMWA. Moreover, external fields can modulate the equivalent circuit parameters (capacitance, inductance, and resistance) in metamaterials, thereby controlling EM coupling mechanisms—including resonance strength and modes—and introducing additional pathways for attenuation. By integrating autonomous control and environmental perception, stimuli-responsive IAMs have shifted the paradigm from a static “structure–property” relationship to a dynamic “stimulus-state-property” framework, where “state” refers to multi-scale structures and compositions. Furthermore, this evolution also represents a transition from “single functions” toward “system integration”, paving the way for next-generation intelligent stealth platforms.

The solid electrolyte interphase (SEI) is a key property of lithium-metal batteries (LMBs), affecting their Coulombic efficiency, rate capability, and cycle life. However, conventional SEIs, primarily formed by the decomposition of lithium salts and fluorinated additives to create inorganic-dominant interphases, suffer from inhomogeneous Li deposition and low ionic conductivity. These intrinsic drawbacks accelerate severe side reactions with the electrolyte, cause rapid capacity fading and accumulation of dead Li, and present safety concerns, particularly under elevated current density. In this study, we unravel the essential role of the SEI on the Li-metal anode in LMBs by creating a conjugation-mediated and polarity-switchable interfacial architecture. The thiophene-embedded polymer-like SEI, formed by in situ electrochemical oligomerization of thiophene, enhances Li⁺ ion conductivity by coordinating with lone electron pairs in sp² orbitals. Concurrently, the conjugated π systems involving sp² hybridized C＝C bonds and S atoms enable switchable polarity of p_zorbitals, facilitating dynamic electron-cloud redistribution during Li plating and stripping. This orbital-level adaptability accelerates Li⁺ migration, suppresses dendritic growth, and stabilizes the Li-metal surface under high-current operation. This study establishes a new paradigm in orbital-engineered interfacial design in LMBs, bridging molecular-scale electronic polarization with macroscopic fast-charging stability. Furthermore, our study underscores that fine-tuning the properties of the SEI and the cathode electrolyte interphase is key to unlocking the transformative potential of LMBs for practical applications.

Neuromorphic computing systems inspired by biological principles have garnered significant attention for their superior energy efficiency and computational capabilities, with memristors serving as fundamental building blocks. However, realizing biologically plausible signal processing—particularly in applications like biological vision—requires multi-state bidirectional (excitatory/inhibitory) responses to emulate synaptic modulation, a functionality unattainable with conventional unidirectional resistive memristors. Here, we demonstrate a field-free spin–orbit torque magnetic memristor based on Fe₃GeTe₂/WTe₂ heterostructures, operating within the 110–150 K temperature range, that overcomes this limitation. The thickness-dependent ferromagnetic properties of Fe₃GeTe₂ enable multi-state Hall resistance modulation, while WTe₂'s localized spin injection precisely controls magnetic domain reversals in Fe₃GeTe₂—without an external magnetic field—ensuring the compatibility with CMOS platform. This synergistic approach achieves eight distinct resistance states (3-bit precision) spanning both polarities. We demonstrate the technology's neuromorphic potential through two benchmarks: high-fidelity image feature extraction (matching software-implemented algorithms) and competitive neural network clustering, both achieved with minimal hardware overhead. Our work provides a device-level solution for implementing signed weight updates in neuromorphic hardware, opening new avenues for energy-efficient computing systems capable of complex signal processing.

Light-weight, flexible perovskite/organic tandem solar cells (TSCs) hold great potential for applications in wearable electronics, agricultural photovoltaics, building-integrated photovoltaics, car-integrated photovoltaics, and other emerging applications. However, matching current densities of near-infrared organic absorbers typically requires wide-bandgap (WBG, >1.80 eV) perovskites, which suffer from complex compositions, uncontrolled defect formation, and severe nonradiative recombination. Herein, we propose a rationally designed synergistic ionic additive, (R)-(+)-tetrahydro-3-furylamine p-toluenesulfonate salt, where both the cation and anion are engineered to deliver complementary defect passivation effects. Specifically, the p-toluenesulfonate anion and the (R)-(+)-tetrahydro-3-furylamine cation can form electrostatic interactions with various defects, while their functional groups can further enhance the passivation effect by strong interactions. The corresponding characterizations further reveal that this synergistic defect modulation strategy enables comprehensive defect passivation, residual stress relaxation, and mechanical robustness enhancement in WBG perovskite films. As a result, our WBG perovskite solar cells and perovskite/organic TSCs on flexible substrates achieve power conversion efficiencies of 18.13% and 22.44%, respectively, along with excellent mechanical bending stability.

We fabricated a p-i-n heterostructured junction synaptic transistor, composed of poly(3-hexylthiophene-2,5-diyl) nanowire thin-film/poly(methyl methacrylate)/ZnO nanowires (abbreviated as PZJ STs), which can emulate biological sensory and motor nervous systems. The p-i-n junction simulates complex neurological behaviors, such as reconfigurability and dual potentiation, driven by the release of different neurotransmitters from the presynaptic membrane. The PZJ STs also enabled ultraviolet recognition and color discrimination. The recognition and classification accuracy of four-character color verification codes were 96% and 92%, respectively. More importantly, the PZJ STs exhibited potentiation and inhibitory postsynaptic currents in response to negative pulses of different frequencies. The frequency-dependent postsynaptic current responses were further applied, for the first time, to construct an artificial sensory and motor nervous system that simulates the response of an organism to different sonic frequencies. The use of PZJ STs facilitate fabricating artificial sensory and motor nervous systems, extending the application scenarios and functions of future neuromorphic electronics.