Computational design of two-dimensional MA₂Z₄ family field-effect transistor for future Ångström-scale CMOS technology nodes

Abstract

Advancing complementary metal–oxide–semiconductor (CMOS) technology into the sub-1-nm Ångström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming the short-channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, MA{\hspace{0.17em}}_2Z{\hspace{0.17em}}_4 family has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulations using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for assessing the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MA{\hspace{0.17em}}_2Z{\hspace{0.17em}}_4 family FETs. We review the physical properties of MoSi{\hspace{0.17em}}_2N{\hspace{0.17em}}_4 that makes them compelling candidates for transistor applications, and the simulated device performance and optimization strategy of MA{\hspace{0.17em}}_2Z{\hspace{0.17em}}_4 family FETs. Finally, we discuss the key challenges and research gaps, as well as the future directions of MA{\hspace{0.17em}}_2Z{\hspace{0.17em}}_4 family FET research toward the Ångström-scale CMOS era.

Keywords

2D semiconductors / computational device design / field-effect transistors / MoSi₂N₄ family / NEGF simulations

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